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    Vishay Siliconix SIF912EDZ-T1-E3

    MOSFET 2N-CH 30V 7.4A PPAK
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    DigiKey SIF912EDZ-T1-E3 Reel 3,000
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    SIF912EDZ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIF912EDZ Vishay Siliconix MOSFETs Original PDF
    SIF912EDZ-T1-E3 Vishay Bi-Directional N-Channel 30-V (D-S) MOSFET Original PDF
    SIF912EDZ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.4A 6-POWERPAK Original PDF

    SIF912EDZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiF912EDZ

    Abstract: No abstract text available
    Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SiF912EDZ S-60410Rev. 20-Mar-06 PDF

    SIF912EDZ

    Abstract: No abstract text available
    Text: SiF912EDZ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFETS: 2.5-V Rated


    Original     		SiF912EDZ SiF912EDZ-T1--E3 S-41430--Rev. 26-Jul-04 PDF

    SiF912EDZ

    Abstract: s2mc
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated


    Original     		SiF912EDZ SiF912EDZ-T1--E3 S-50131--Rev. 24-Jan-05 s2mc PDF

    S-50131-Rev

    Abstract: 50131 SiF912EDZ
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated


    Original     		SiF912EDZ SiF912EDZ-T1--E3 08-Apr-05 S-50131-Rev 50131 PDF

    SiF912EDZ

    Abstract: 3437S
    Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SiF912EDZ 18-Jul-08 3437S PDF

    SiF912EDZ

    Abstract: S82350
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated


    Original     		SiF912EDZ SiF912EDZ-T1-GE3 18-Jul-08 S82350 PDF

    7409

    Abstract: AN609 SiF912EDZ
    Text: SiF912EDZ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiF912EDZ AN609 13-Aug-07 7409 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated


    Original     		SiF912EDZ SiF912EDZ-T1-GE3 08-Apr-05 PDF

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    NEC DIODES

    Abstract: No abstract text available
    Text: µPA2450/51B Series Power-Switching Solutions for Battery-Powered Applications Description Dual N-channel MOSFETs The µPA2450/51B Series of dual N-channel MOSFETs meets the challenges of battery-powered products with thin packages, low RDS ON , fast switching speed and integrated ESD protection


    Original     		PA2450/51B NEC DIODES PDF

    Siliconix mosfet guide

    Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
    Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9731 TSSOP-16 Si9371 Siliconix mosfet guide Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    vishay power pak SO-8 package height

    Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
    Text: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 vishay power pak SO-8 package height si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8 PDF