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Catalog Datasheet	MFG & Type	PDF	Document Tags
SiHFI9640G Abstract: No abstract text available Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFI9640G
IRFI9610G Abstract: SiHFI9640G IRFI9640G SiHFI9640G-E3 Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 18-Jul-08 IRFI9610G SiHFI9640G IRFI9640G SiHFI9640G-E3
SiHFI9640G Abstract: No abstract text available Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFI9640G
SiHFI9640G Abstract: IRFI9610G IRFI9640G SiHFI9640G-E3 Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 18-Jul-08 SiHFI9640G IRFI9610G IRFI9640G SiHFI9640G-E3
SiHFI9640G Abstract: No abstract text available Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 12-Mar-07 SiHFI9640G
SiHFI9640G Abstract: No abstract text available Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFI9640G
AN609 Abstract: IRFI9610G Text: IRFI9610G_RC, SiHFI9610G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFI9610G SiHFI9610G AN609, 11-May-10 AN609
SiHFI9640G Abstract: IRFI9610G IRFI9640G SiHFI9640G-E3 Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 11-Mar-11 SiHFI9640G IRFI9610G IRFI9640G SiHFI9640G-E3