Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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PDF
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IRFPF50,
SiHFPF50
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFPF50
Abstract: SiHFPF50
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRFPF50,
SiHFPF50
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFPF50
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Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFPF50,
SiHFPF50
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPF50_RC, SiHFPF50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFPF50
SiHFPF50
AN609,
09-Jul-10
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IRFPF50
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
|
Original
|
PDF
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IRFPF50,
SiHFPF50
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IRFPF50
|
Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching
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Original
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PDF
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IRFPF50,
SiHFPF50
O-247
O-247
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRFPF50,
SiHFPF50
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFPF50
Abstract: SiHFPF50
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching
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Original
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PDF
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IRFPF50,
SiHFPF50
O-247
O-247
18-Jul-08
IRFPF50
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IRFPF50
Abstract: SiHFPF50
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 1.6 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching
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Original
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PDF
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IRFPF50,
SiHFPF50
O-247
O-247
18-Jul-08
IRFPF50
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Untitled
Abstract: No abstract text available
Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRFPF50,
SiHFPF50
2002/95/EC
O-247AC
O-247AC
O-22hay
11-Mar-11
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