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    SIHFPS38N60L Price and Stock

    Vishay Siliconix SIHFPS38N60L-GE3

    POWER MOSFET SUPER-247, 150 M @
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHFPS38N60L-GE3 Tube 475 1
    • 1 $6.22
    • 10 $6.22
    • 100 $3.955
    • 1000 $3.955
    • 10000 $3.955
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    Vishay Intertechnologies SIHFPS38N60L-GE3

    MOSFET N-CHANNEL 600V (Alt: SIHFPS38N60L-GE3)
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    Avnet Americas SIHFPS38N60L-GE3 480
    • 1 -
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    • 1000 $3.88381
    • 10000 $3.88381
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    Verical SIHFPS38N60L-GE3 45 2
    • 1 -
    • 10 $4.016
    • 100 $4.016
    • 1000 $4.016
    • 10000 $4.016
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    Newark SIHFPS38N60L-GE3 Bulk 36 1
    • 1 $5.35
    • 10 $4.82
    • 100 $4.1
    • 1000 $4.1
    • 10000 $4.1
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    TTI SIHFPS38N60L-GE3 Tube 480
    • 1 -
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    • 1000 $3.96
    • 10000 $3.96
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    Chip1Stop SIHFPS38N60L-GE3 45
    • 1 $5.71
    • 10 $5.71
    • 100 $5.71
    • 1000 $5.71
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    EBV Elektronik SIHFPS38N60L-GE3 9 Weeks 30
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    SIHFPS38N60L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHFPS38N60L-GE3 Vishay Siliconix POWER MOSFET SUPER-247, 150 M @ Original PDF

    SIHFPS38N60L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO274

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TO274

    IRFPS38N60L

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L O-247 18-Jul-08 IRFPS38N60L

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L_RC, SiHFPS38N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFPS38N60L SiHFPS38N60L AN609, 4430m 1072m 7950m 0167m 2388m

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 11-Mar-11

    IRFPS38N60L

    Abstract: S11 CASE MARKING diode
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 11-Mar-11 IRFPS38N60L S11 CASE MARKING diode

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L O-247 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L O-247 18-Jul-08

    S11 CASE MARKING diode

    Abstract: diode s11
    Text: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive


    Original     		PDF IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 18-Jul-08 S11 CASE MARKING diode diode s11