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    Vishay Siliconix SIHFS9N60A-GE3

    MOSFET N-CH 600V 9.2A TO263
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    DigiKey SIHFS9N60A-GE3 Reel 1,000
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    • 1000 $0.88545
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    Vishay Intertechnologies SIHFS9N60A-GE3

    MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFS9N60A-GE3)
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    Avnet Americas SIHFS9N60A-GE3 Reel 13 Weeks 1,000
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    Mouser Electronics SIHFS9N60A-GE3 850
    • 1 $2.06
    • 10 $1.71
    • 100 $1.37
    • 1000 $0.885
    • 10000 $0.863
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    TTI SIHFS9N60A-GE3 Reel 1,000
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    TME SIHFS9N60A-GE3 1
    • 1 $2.24
    • 10 $2.02
    • 100 $1.6
    • 1000 $1.49
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    EBV Elektronik SIHFS9N60A-GE3 14 Weeks 50
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    SIHFS9N60A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHFS9N60A-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.2A TO263 Original PDF

    SIHFS9N60A Datasheets Context Search

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    IRFS9N60APBF

    Abstract: IRFS9N60A SiHFS9N60A SiHFS9N60A-E3
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60APBF IRFS9N60A SiHFS9N60A-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11

    IRFS9N60A

    Abstract: SiHFS9N60A SiHFS9N60A-E3 IRFS9N60APBF
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11 IRFS9N60A SiHFS9N60A-E3 IRFS9N60APBF

    IRFS9N60A

    Abstract: IRFS9N60APBF SiHFS9N60A SiHFS9N60A-E3 s09 355
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60A IRFS9N60APBF SiHFS9N60A-E3 s09 355

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A_RC, SiHFS9N60A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFS9N60A SiHFS9N60A AN609, 5126m 6185m 3182m 5507m 4788m

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11