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    SIHG23N60E Price and Stock

    Vishay Siliconix SIHG23N60E-GE3

    MOSFET N-CH 600V 23A TO247AC
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    DigiKey SIHG23N60E-GE3 Tube 500
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    Bristol Electronics SIHG23N60E-GE3 175
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    SIHG23N60E-GE3 25 2
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    Quest Components SIHG23N60E-GE3 140
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    SIHG23N60E-GE3 20
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    Vishay Intertechnologies SIHG23N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHG23N60E-GE3)
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    Avnet Americas SIHG23N60E-GE3 Bulk 19 Weeks 500
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    Mouser Electronics SIHG23N60E-GE3 293
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    TTI SIHG23N60E-GE3 Tube 2,500 50
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    EBV Elektronik SIHG23N60E-GE3 20 Weeks 25
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    SIHG23N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG23N60E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AC Original PDF

    SIHG23N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS


    Original     		PDF SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS


    Original     		PDF SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG23N60E AN609, 0914u 6390m 6702m 1736u 26-Jun14