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    Vishay Siliconix SIHG28N65EF-GE3

    MOSFET N-CH 650V 28A TO247AC
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    DigiKey SIHG28N65EF-GE3 Tube 500
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    Vishay Intertechnologies SIHG28N65EF-GE3

    N-CHANNEL 650V - Bulk (Alt: SIHG28N65EF-GE3)
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    Avnet Americas SIHG28N65EF-GE3 Bulk 18 Weeks 500
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    Mouser Electronics SIHG28N65EF-GE3 450
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    Newark SIHG28N65EF-GE3 Cut Tape 1
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    SIHG28N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG28N65EF-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 28A TO-247AC Original PDF

    SIHG28N65E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)


    Original     		PDF SiHG28N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG28N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG28N65E AN609, 7113m 5283m 0346m 9810u 28-Nov-14

    Untitled

    Abstract: No abstract text available
    Text: SiHG28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC) 37


    Original     		PDF SiHG28N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12