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    SIHG47N60EF Price and Stock

    Vishay Intertechnologies SIHG47N60EF-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG47N60EF-GE3)
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    Avnet Americas SIHG47N60EF-GE3 Reel 18 Weeks 500
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    Mouser Electronics SIHG47N60EF-GE3 181
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    Newark SIHG47N60EF-GE3 Bulk 500
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    SIHG47N60EF-GE3 Reel 500
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    TTI SIHG47N60EF-GE3 Tube 5,000 50
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    TME SIHG47N60EF-GE3 1
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    EBV Elektronik SIHG47N60EF-GE3 19 Weeks 25
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    Vishay Siliconix SIHG47N60EF-GE3

    600V 67mOhms@10V 47A N-Ch EF-SRS | Siliconix / Vishay SIHG47N60EF-GE3
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    RS SIHG47N60EF-GE3 Bulk 500
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    Vishay Huntington SIHG47N60EF-GE3

    MOSFET N-CH 600V 47A TO247AC
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    Win Source Electronics SIHG47N60EF-GE3 6,960
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    SIHG47N60EF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG47N60EF-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF

    SIHG47N60EF Datasheets Context Search

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    sihg47n60ef

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG47N60EF AN609, 3917m 8866m 2793m 1544m 10-Jun-13

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •    


    Original     		PDF O-220, O-263, O-220F, O247AD, O-247AC SiHP21N60EF SiHB21N60EF SiHA21N60EF SiHG21N60EF SiHG47N60EF

    System Application Note AN847

    Abstract: AN847
    Text: VISHAY SILICONIX www.vishay.com MOSFETs System Application Note AN847 Zero-Voltage Switching Full-Bridge Converter: Operation, FOM, and Guidelines for MOSFET Selection By Philip Zuk and Sanjay Havanur There are two categories of switching topologies used in


    Original     		PDF AN847 SiHx21N60EF SiHx28N60EF SiHx33N60EF SiHG47N60EF 15-Dec-14 System Application Note AN847 AN847