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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRLI640G Abstract: SiHLI640G SiHLI640G-E3 Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 18-Jul-08 IRLI640G SiHLI640G-E3
Untitled Abstract: No abstract text available Text: IRLI640G_RC, SiHLI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRLI640G SiHLI640G AN609, CONFIGUp-10 3123m 1402m 4920m 6834m
Untitled Abstract: No abstract text available Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRLI640G Abstract: part marking ab SiHLI640G SiHLI640G-E3 Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 18-Jul-08 IRLI640G part marking ab SiHLI640G-E3
Untitled Abstract: No abstract text available Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V	Original	PDF	IRLI640G, SiHLI640G O-220 11-Mar-11