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Vishay Siliconix SIHP22N60E-E3 MOSFET N-CH 600V 21A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP22N60E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.8125 10000 $1.8125	Buy Now
Vishay Siliconix SIHP22N60E-GE3 MOSFET N-CH 600V 21A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP22N60E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.8125 10000 $1.8125	Buy Now
Vishay Siliconix SIHP22N60EF-GE3 MOSFET N-CH 600V 19A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP22N60EF-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.59731 10000 $1.59731	Buy Now
Vishay Siliconix SIHP22N60EL-GE3 MOSFET N-CH 600V 21A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP22N60EL-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.8625 10000 $1.8625	Buy Now
Vishay Intertechnologies SIHP22N60EF-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHP22N60EF-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHP22N60EF-GE3	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $1.56875 10000 $1.47647	Buy Now
Mouser Electronics	SIHP22N60EF-GE3		1,973			1 $3.36 10 $2.83 100 $1.81 1000 $1.6 10000 $1.56	Buy Now
Newark	SIHP22N60EF-GE3	Bulk			1,000	1 - 10 - 100 - 1000 $1.8 10000 $1.67	Buy Now
TTI	SIHP22N60EF-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.66 10000 $1.57	Buy Now
TME	SIHP22N60EF-GE3				1	1 $3.69 10 $3.32 100 $2.64 1000 $2.45 10000 $2.45	Get Quote

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SIHP22N60E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHP22N60E-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB		Original	PDF
SIHP22N60EF-GE3		Vishay Siliconix	MOSFET N-CH 600V 19A TO220AB		Original	PDF
SIHP22N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB		Original	PDF
SIHP22N60EL-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO220AB		Original	PDF

SIHP22N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sihp22n6 Abstract: SiHP22N60E-GE3 Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihp22n6 SiHP22N60E-GE3
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SIHP22N60E Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two	Original	PDF	SiHP22N60E 2002/95/EC O-220AB 11-Mar-11
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low figure-of-merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E 2002/95/EC O-220AB 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	PDF	SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHP22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHP22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14
Untitled Abstract: No abstract text available Text: SiHP22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg	Original	PDF	SiHP22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	PDF	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
v0615a Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7	Original	PDF	J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836