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    SIHP33N60E Price and Stock

    Vishay Siliconix SIHP33N60E-GE3

    MOSFET N-CH 600V 33A TO220AB
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    DigiKey SIHP33N60E-GE3 Tube 1,000
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    Vishay Siliconix SIHP33N60EF-GE3

    MOSFET N-CH 600V 33A TO220AB
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    DigiKey SIHP33N60EF-GE3 Tube 1
    • 1 $5.3
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    Bristol Electronics SIHP33N60EF-GE3 500
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    Quest Components SIHP33N60EF-GE3 400
    • 1 $7.656
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    Vishay Intertechnologies SIHP33N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: 68W7069)
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    Avnet Americas SIHP33N60E-GE3 Bulk 27 Weeks, 3 Days 1
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    SIHP33N60E-GE3 Bulk 14 Weeks 1
    • 1 $6.39
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    SIHP33N60E-GE3 Reel 19 Weeks 1,000
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    Mouser Electronics SIHP33N60E-GE3 358
    • 1 $6.51
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    Arrow Electronics SIHP33N60E-GE3 1 19 Weeks 1
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    Newark SIHP33N60E-GE3 Bulk 803 1
    • 1 $3.55
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    TTI SIHP33N60E-GE3 Tube 1,200 50
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    EBV Elektronik SIHP33N60E-GE3 20 Weeks 50
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    Vishay Intertechnologies SIHP33N60EF-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHP33N60EF-GE3)
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    Avnet Americas SIHP33N60EF-GE3 Reel 19 Weeks 1,000
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    Mouser Electronics SIHP33N60EF-GE3 573
    • 1 $4.95
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    Newark SIHP33N60EF-GE3 Bulk 1,000
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    TTI SIHP33N60EF-GE3 Tube 1,000 100
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    TME SIHP33N60EF-GE3 1
    • 1 $8.01
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    EBV Elektronik SIHP33N60EF-GE3 20 Weeks 50
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    SIHP33N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP33N60EF-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO-220-3 Original PDF
    SIHP33N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-220AB Original PDF

    SIHP33N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP33N60E AN609, 1751m 0301m 8046m 3132m 19-Mar-14

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reduced switching and conduction losses


    Original     		PDF SiHP33N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHP33N60EF-GE3

    Abstract: No abstract text available
    Text: SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg


    Original     		PDF SiHP33N60EF O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHP33N60EF-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHP33N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: 2015 Super 12 Products SiHP33N60EF / EF Series High-Voltage MOSFETs SiHP33N60EF / EF Series HV Fast Body Diode Power MOSFET Offers up to 10x Reduction in Qrr • Features: • Based on E Series Super Junction technology • Fast body diode provides as much as 10x reduction in Qrr over


    Original     		PDF SiHP33N60EF MOSFET TOSHIBA 2015

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / November 2014 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com Vishay Releases its First Two 600 V Fast Body Diode N-Channel MOSFETs for Soft Switching Topologies Product Benefits: •  


    Original     		PDF O-220, O-263, O-220F, O-247AC SiHP28N60EF SiHF28N60EF SiHB28N60EF SiHG28N60EF SiHG33N60EF SiHP33N60EF

    Device Application Note AN849

    Abstract: AN849 planar mosfet
    Text: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching


    Original     		PDF AN849 Device Application Note AN849 AN849 planar mosfet