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    SIR401DP Search Results

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    SIR401DP Price and Stock

    Vishay Siliconix SIR401DP-T1-GE3

    MOSFET P-CH 20V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR401DP-T1-GE3 Cut Tape 3,286 1
    • 1 $1.49
    • 10 $0.942
    • 100 $1.49
    • 1000 $0.44769
    • 10000 $0.44769
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    SIR401DP-T1-GE3 Digi-Reel 3,286 1
    • 1 $1.49
    • 10 $0.942
    • 100 $1.49
    • 1000 $0.44769
    • 10000 $0.44769
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    SIR401DP-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.39234
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    Vishay Intertechnologies SIR401DP-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR401DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR401DP-T1-GE3 Reel 18 Weeks 3,000
    • 1 -
    • 10 -
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    • 10000 $0.3444
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    Mouser Electronics SIR401DP-T1-GE3 10,793
    • 1 $1.17
    • 10 $0.701
    • 100 $0.517
    • 1000 $0.405
    • 10000 $0.35
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    TTI SIR401DP-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.35
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    TME SIR401DP-T1-GE3 3,000
    • 1 -
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    • 10000 $0.583
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    EBV Elektronik SIR401DP-T1-GE3 19 Weeks 3,000
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    Others SIR401DPT1GE3

    AVAILABLE EU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR401DPT1GE3 2,250
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    Vishay Intertechnologies SIR401DPT1GE3

    P-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR401DPT1GE3 1,220
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    Vishay Huntington SIR401DP-T1-GE3

    MOSFET P-CH 20V 50A PPAK SO-8 / P-Channel 20 V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK? SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR401DP-T1-GE3 1,620
    • 1 -
    • 10 -
    • 100 $0.5573
    • 1000 $0.3716
    • 10000 $0.3716
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    SIR401DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR401DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 50A SO-8 Original PDF

    SIR401DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8


    Original     		SiR401DP 2002/95/EC SiR401DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8


    Original     		SiR401DP 2002/95/EC SiR401DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR401DP 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8


    Original     		SiR401DP 2002/95/EC SiR401DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR401DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    marking 7200 so8

    Abstract: No abstract text available
    Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8


    Original     		SiR401DP 2002/95/EC SiR401DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking 7200 so8 PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF