Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIR832DP Search Results

    SIR832DP Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    AN609

    Abstract: 2185594
    Text: SiR832DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR832DP AN609, 12-Mar-10 AN609 2185594 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR832DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR832DP 18-Jul-08 PDF