Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIR844DP Search Results

    SF Impression Pixel

    SIR844DP Price and Stock

    Vishay Siliconix SIR844DP-T1-GE3

    MOSFET N-CH 25V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR844DP-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SIR844DP-T1-GE3 Digi-Reel 1
    • 1 $2.19
    • 10 $1.4
    • 100 $2.19
    • 1000 $0.69579
    • 10000 $0.69579
    		Buy Now
    SIR844DP-T1-GE3 Cut Tape 1
    • 1 $2.19
    • 10 $2.19
    • 100 $2.19
    • 1000 $2.19
    • 10000 $2.19
    		Buy Now

    SIR844DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR844DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A 8-SOIC Original PDF

    SIR844DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5361

    Abstract: AN609 64834
    Text: SiR844DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR844DP AN609, 31-Mar-09 5361 AN609 64834

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR844DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50a, g 0.0038 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 29.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 G


    Original     		PDF SiR844DP 2002/95/EC SiR844DP-T1-GE3 18-Jul-08

    S0904

    Abstract: No abstract text available
    Text: SPICE Device Model SiR844DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR844DP 18-Jul-08 S0904

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477