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    SIS488DN Price and Stock

    Vishay Siliconix SIS488DN-T1-GE3

    MOSFET N-CH 40V 40A PPAK1212-8
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    DigiKey SIS488DN-T1-GE3 Digi-Reel 1
    • 1 $1.49
    • 10 $0.942
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    SIS488DN-T1-GE3 Cut Tape 1
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    SIS488DN-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIS488DN-T1-GE3

    Trans MOSFET N-CH 40V 19.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS488DN-T1-GE3)
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    Avnet Americas SIS488DN-T1-GE3 Reel 27 Weeks 3,000
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    SIS488DN-T1-GE3 Reel 27 Weeks 3,000
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    Mouser Electronics SIS488DN-T1-GE3
    • 1 $1.15
    • 10 $0.784
    • 100 $0.546
    • 1000 $0.405
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    Newark SIS488DN-T1-GE3 Reel 3,000
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    SIS488DN-T1-GE3 Cut Tape 1
    • 1 $1.21
    • 10 $0.849
    • 100 $0.611
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    TTI SIS488DN-T1-GE3 Reel 3,000
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    TME SIS488DN-T1-GE3 1
    • 1 $0.744
    • 10 $0.669
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    Avnet Asia SIS488DN-T1-GE3 29 Weeks 1
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    EBV Elektronik SIS488DN-T1-GE3 28 Weeks 3,000
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    Vishay Huntington SIS488DN-T1-GE3

    MOSFET N-CH 40V 40A 1212-8 / Trans MOSFET N-CH Si 40V 40A 8-Pin PowerPAK 1212 EP
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    Win Source Electronics SIS488DN-T1-GE3 9,898
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    • 100 $1.0286
    • 1000 $0.8357
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    SIS488DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS488DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 40A 1212-8 Original PDF

    SIS488DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS488DN Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () (Max.) ID (A)f 0.0055 at VGS = 10 V 40g 0.0075 at VGS = 4.5 V 40g • • • • Qg (Typ.) 9.8 nC PowerPAK 1212-8 TrenchFET® Power MOSFET 100 % Rg and UIS Tested


    Original     		SiS488DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS488DN Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () (Max.) ID (A)f 0.0055 at VGS = 10 V 40g 0.0075 at VGS = 4.5 V 40g • • • • Qg (Typ.) 9.8 nC PowerPAK 1212-8 TrenchFET® Power MOSFET 100 % Rg and UIS Tested


    Original     		SiS488DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS488DN www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiS488DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS488DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiS488DN AN609, 8275m 3444u 7413m 2543m 8535m 1282m 6387m 02-Jul-13 PDF

    PowerPAK 1212-8

    Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of


    Original     		SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics


    Original     		SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF