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    SIS888DN Price and Stock

    Vishay Siliconix SIS888DN-T1-GE3

    MOSFET N-CH 150V 20.2A PPAK
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    DigiKey SIS888DN-T1-GE3 Reel 3,000 3,000
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    SIS888DN-T1-GE3 Cut Tape 2,238 1
    • 1 $1.57
    • 10 $1.289
    • 100 $1.0022
    • 1000 $0.69198
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    SIS888DN-T1-GE3 Digi-Reel 1
    • 1 $1.57
    • 10 $1.289
    • 100 $1.0022
    • 1000 $0.69198
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    New Advantage Corporation SIS888DN-T1-GE3 6,000 1
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    Vishay Intertechnologies SIS888DN-T1-GE3

    Trans MOSFET N-CH 150V 5.3A 8-Pin PowerPAK - Tape and Reel (Alt: SIS888DN-T1-GE3)
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    Avnet Americas SIS888DN-T1-GE3 Reel 26 Weeks 6,000
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    Mouser Electronics SIS888DN-T1-GE3 4,086
    • 1 $1.57
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    • 100 $1.01
    • 1000 $0.692
    • 10000 $0.592
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    Verical SIS888DN-T1-GE3 3,000 3,000
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    Newark SIS888DN-T1-GE3 Cut Tape 16,959 1
    • 1 $1.56
    • 10 $1.56
    • 100 $1.03
    • 1000 $0.63
    • 10000 $0.551
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    SIS888DN-T1-GE3 Reel 6,000
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    Bristol Electronics SIS888DN-T1-GE3 3,000
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    TTI SIS888DN-T1-GE3 Reel 6,000 6,000
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    TME SIS888DN-T1-GE3 1
    • 1 $1.35
    • 10 $1.22
    • 100 $0.96
    • 1000 $0.9
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    EBV Elektronik SIS888DN-T1-GE3 29 Weeks 6,000
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    SIS888DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS888DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 20.2A 1212-8S Original PDF

    SIS888DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss


    Original     		PDF SiS888DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS888DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS888DN AN609, 0033m 8804u 0137m 3078m 3392m 8067m 5000m 15-Sep-14

    Untitled

    Abstract: No abstract text available
    Text: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss


    Original     		PDF SiS888DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs