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Vishay Siliconix SIZ904DT-T1-GE3 MOSFET 2N-CH 30V 12A 6POWERPAIR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIZ904DT-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.46064	Buy Now
	SIZ904DT-T1-GE3	Digi-Reel			1	1 $1.71 10 $1.71 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
	SIZ904DT-T1-GE3	Cut Tape			1	1 $1.71 10 $1.71 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
RS	SIZ904DT-T1-GE3	Bulk			10	1 - 10 $0.574 100 $0.545 1000 $0.488 10000 $0.488	Get Quote
Vishay Intertechnologies SIZ904DT-T1-GE3 DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIZ904DT-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIZ904DT-T1-GE3	Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.41574	Buy Now
Mouser Electronics	SIZ904DT-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.422	Get Quote
Bristol Electronics	SIZ904DT-T1-GE3		2,778			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIZ904DT-T1-GE3		2,222			1 $1.66 10 $1.66 100 $1.66 1000 $0.664 10000 $0.581	Buy Now
TTI	SIZ904DT-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.431	Buy Now

TME	SIZ904DT-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.69	Get Quote
EBV Elektronik	SIZ904DT-T1-GE3			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIZ904DTT1GE3 DUAL N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIZ904DTT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIZ904DT Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIZ904DT-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 12A POWERPAIR		Original	PDF

SIZ904DT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a	Original	SiZ904DT 2002/95/EC SiZ904DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a	Original	SiZ904DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a	Original	SiZ904DT 2002/95/EC SiZ904DT-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a	Original	SiZ904DT 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiZ904DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiZ904DT 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a	Original	SiZ904DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in	Original	SiZ340DT SiZ342DT VMN-MS6927-1406	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one	Original	SiZ790DT SiZ914DT VMN-PT0182-1402	PDF