MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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2SC3953
Abstract: TRANSISTOR T0220 2SC3597
Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)
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HPA72R*
T03PBL
HPA100R
2SC4256
2SC4257
2SC3675
2SC3676
2SC4450
2SC3953
TRANSISTOR T0220
2SC3597
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TRANSISTOR T0220
Abstract: 2SC4429 2sc3990
Text: S WI TC HI NG POWER TRANSISTOR F e a t u r e s ☆ Short switching time ☆ High br ea kdown voltage ☆ Wide ASO ☆ High reliability because of planar type ate H i g h - S p e e d Type U s e ☆Switching regulators ☆Motor control MBIT P r o c e s s Package
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Tc-25t!
Ratings/Ta-25
2SC4219
2SC4220
2SC4105
2SC4106
2SC4107
2SC4164
2SC4160
2SC4161
TRANSISTOR T0220
2SC4429
2sc3990
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2SC3998
Abstract: using of damper in Horizontal Output Transistor 6-10T 2SC4891 transistor 2SC3998 2sc3997 2sc3996 IT0-22 2sc5042
Text: SAf/YO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 ajc S t i - u c t u r e a n d Structure patterned with a large number of units consisting of base island £nd emitter region as shown
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200Aim
Dampe500
min90
2SC3894,
2SC3895
2SC3896
2SC3897,
2SC4770
2SC4923
2SC4924.
2SC3998
using of damper in Horizontal Output Transistor
6-10T
2SC4891
transistor 2SC3998
2sc3997
2sc3996
IT0-22
2sc5042
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horizontal deflection
Abstract: No abstract text available
Text: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)
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2SD1396
T03PB
Color800
2SC4125
T03PML
2SC4890
2SC4891
2SC3995
horizontal deflection
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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M9412
Abstract: 2SC5047
Text: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base
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DD54RCLS
2SC3894
2SC3895
2SC3896
2SC3897,
2SC4770,
2SC4923,
2SC4924.
2SC3995,
2SC3996,
M9412
2SC5047
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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transistor 2SC3998
Abstract: No abstract text available
Text: SILICON TRANSISTORS FOR TV/VTR USE VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT, VIDEO OUTPUT APPLICATIONS : New product Classified by package and arranged in order of increasing P q . Minus sign for PNP is omitted due to space limitations.
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2SC3636
2SC3637
2SC3638
2SC3642
2SC3643
2SC3644
2SC4440
2SC4441
T0220ML
O220ML
transistor 2SC3998
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ce 2826 ic
Abstract: No abstract text available
Text: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)
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HPA100R
100ns)
cH707k>
GD2G44G
ce 2826 ic
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2SC4630LS
Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )
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T0-220FI
T0-220.
diffus-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
2SC4630LS
2SC4631LS
2SC4632LS
2SC4633LS
2SC4634LS
2SC4635LS
2SC4636LS
2SC4637LS
2SC4710LS
T0-126ML
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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2SK3099
Abstract: 2SK2434 2SK2617 2SJ522 2SK3092 2SK3093 2SK3094 2SK3095 2SK3096 2SK3097
Text: SAfiYO L a r g e - s i g n a l Power M0SFETs 4 The Sanyo J-MOS s e r i e s u t i l i z e s Sanyo’ s own f in e f a b r ic a t io n process fo r power d evices to develop an e n tir e s e r ie s of u ltr a h ig h perform ance power d e v ic e s cap ab le o f high v o lta g e , high speed and larg e cu rren t operation.
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2SK2619
2SK2617LS
2SK2618LS
T0-220FI
2SK2618LS
7eJc57Q7b
MT980707TR
2SK3099
2SK2434
2SK2617
2SJ522
2SK3092
2SK3093
2SK3094
2SK3095
2SK3096
2SK3097
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Untitled
Abstract: No abstract text available
Text: SA0YO T r a n s i s t o r s for V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use Transistors for CRT horizontal deflection output use must be of high-breakdown voltage.high-current,high-speed
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Ratings/Ta-25"
2SC3591
2SC4478
2SC4440
2SC4441
2SC3636
2SC3637
2SC3638
2SC3642
2SC3643
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK19
2SK1923
T0-220
2SK1924
2SK2043LS
2SK2044LS
O-220FI
2SK2045LS
2SK19;
2SK1922
2SJ32C
2SK14
2SK2142
2sj320
2sj306
2SK142
2SK195
2SK2161
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sanyo transistor tt series
Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.
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becom-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
sanyo transistor tt series
TO225 LEAD FORMING
TRANSISTORS SANYO
sanyo transistor
SSFP package
2SB1269
2SB1449
2SB1450
2SC5264
2SC5420
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transistor 500v
Abstract: 2SC3989 ic24a
Text: Ordering number: EN 2556 2SC3989 NPN Triple Diffused Planar Silicon Transistor SA i YO i 500V/25A Switching Regulator Applications Features . High breakdown voltage, high reliability . Fast switching speed tf: 0.1 ps typ . Adoption of MBIT process Absolute Maxinun Ratings at Ta=25 C
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2SC3989
00V/25A
300ps
200pH
2SC3989
2048B
T03PBL
4217TA
transistor 500v
ic24a
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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HD2A4A
Abstract: HC2A4A HD2A4M HD2F2Q HD2L3N GN1L4M HD2L2Q HPA150R HC1A3M HN1A01F
Text: - 314 - M X Ë t ë Ë? £ tt g S3 m Vqbo Ta=25°C, *EP(iTc=25(tD Iccoo Vc e o f Pc Pc* (W) (W) \îTiSX; If 'CB (V) -0.2 -0. 005 -0.00025 -0.2 -0. 005 -0.00025 -0.3 -0.005 -0.00025 -0.005 -0.2 -0. 005 -0.00025 -5 -0.005 -0.2 -0.005 -0.00025 195 -5 -0.005
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22K/2.
SC-62
2K/10K
47K/4
7K/10K
0/10K
HD2A4A
HC2A4A
HD2A4M
HD2F2Q
HD2L3N
GN1L4M
HD2L2Q
HPA150R
HC1A3M
HN1A01F
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C4106 transistor
Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower
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T0-220MF
O-220
Ratings/Ta-25
T0-220)
2SB1267
2SD1903
D1235
2SB1268
2SD1904
C4106 transistor
C4106
transistor c3457
B824 transistor
c4106 semiconductor
transistor c3447
transistor c4106
transistor d1061
D1060
d1061
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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sc3152
Abstract: 2SC4458 transistor 2SC4460 M
Text: SAfÊYO SWITCHING POWER TRANSISTOR SERI ES Nq 1 e a t u r e s ♦ S h o r t switching time ♦ High breakdown voltage ♦ Hide ASO ♦ High reliability because of planar d U s e ♦ Switching regulators ♦ Motor cont rol type T y p e »sign(Tc-25T! ) Electrical
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Tc-25T!
ngs/Ta-25
2SC3038
2SC3039
2SC3083
2SC3040
2SC3277
2SC3042
2SC4172
2SC3086
sc3152
2SC4458
transistor 2SC4460 M
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