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    T143R Search Results

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    T143R Price and Stock

    SEI Stackpole Electronics Inc RMCF0402FT143R

    RES 143 OHM 1% 1/16W 0402
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    DigiKey RMCF0402FT143R Cut Tape 17,074 1
    • 1 $0.1
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    • 100 $0.0069
    • 1000 $0.00383
    • 10000 $0.00271
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    RMCF0402FT143R Digi-Reel 17,074 1
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    • 1000 $0.00383
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    RMCF0402FT143R Reel 10,000 10,000
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    Avnet Americas RMCF0402FT143R Reel 16 Weeks 10,000
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    Mouser Electronics RMCF0402FT143R
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    NAC RMCF0402FT143R 10,000 1
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    Master Electronics RMCF0402FT143R
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    SEI Stackpole Electronics Inc RMCF0201FT143R

    RES 143 OHM 1% 1/20W 0201
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    DigiKey RMCF0201FT143R Cut Tape 8,755 1
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    • 1000 $0.00601
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    RMCF0201FT143R Digi-Reel 8,755 1
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    • 1000 $0.00601
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    RMCF0201FT143R Cut Tape 8,755 1
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    RMCF0201FT143R Digi-Reel 8,755 1
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    NAC RMCF0201FT143R 40,000 1
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    SEI Stackpole Electronics Inc RMCF0603FT143R

    RES 143 OHM 1% 1/10W 0603
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    DigiKey RMCF0603FT143R Cut Tape 3,928 1
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    RMCF0603FT143R Digi-Reel 3,928 1
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    Avnet Americas RMCF0603FT143R Reel 16 Weeks 5,000
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    NAC RMCF0603FT143R 125,000 1
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    Master Electronics RMCF0603FT143R
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    SEI Stackpole Electronics Inc RMCF2512FT143R

    RES 143 OHM 1% 1W 2512
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    DigiKey RMCF2512FT143R Cut Tape 2,735 1
    • 1 $0.2
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    • 100 $0.0614
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    RMCF2512FT143R Digi-Reel 2,735 1
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    SEI Stackpole Electronics Inc RMEF0603FT143R

    RES 143 OHM 1% 1/10W 0603
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    DigiKey RMEF0603FT143R Reel 5,000
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    Avnet Americas RMEF0603FT143R Reel 16 Weeks 5,000
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    Mouser Electronics RMEF0603FT143R
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    T143R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF990AR

    Abstract: No abstract text available
    Text: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and


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    PDF bS3T31 Q024737 BF990AR OT143R BF990AR

    K 3053 TRANSISTOR

    Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235
    Text: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to


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    PDF BF909; BF909R MBC845 OT143R. K 3053 TRANSISTOR TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235

    dual-gate

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


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    PDF

    bfg67

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors


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    PDF BFG67; BFG67/X; BFG67/XR BFG67/XR BFG67 BFG67/X SCA60 bfg67

    so 54 t

    Abstract: BF547B BF751 T143R BFG65
    Text: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A


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    PDF BF547 F547W BF689K BF747 BF747W BF748 BF751 BF763 BFG31 BFG33/X so 54 t BF547B T143R BFG65

    BF904

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-m odulation perform ance during AGC. FEATURES • S pecially designed fo r use at 5 V supply voltage


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    PDF BF904; BF904R -302A -302B OT143B OT143R BF904

    80500 TRANSISTOR

    Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562
    Text: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


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    PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 E68739-T1 NE68739R-T1 24-Hour 80500 TRANSISTOR mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562

    DIODE marking S4 69

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BF1108; BF1108R Silicon RF-switches Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Silicon RF-switches BF1108; BF1108R FEATURES • S pecially designed fo r low loss R F-sw itching


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    PDF BF1108; BF1108R BF1108R T143B SCA64 125004/00/01/PP12 DIODE marking S4 69

    BF750

    Abstract: sot143r transistor
    Text: 1 P h H ip ^ S em lc o n d u c to r^ ^ ^ ^ H 7110flSb QO bflbbO MD? 1 P H I N Product specification NPN 7 GHz wideband transistor FEATURES BF750 PINNING PIN • High power gain • Low noise figure 3 DESCRIPTION 4 Code: V32 • Gold metallization ensures excellent reliability.


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    PDF 711002b BF750 BF750 OT143R MSB035 OT143R. sot143r transistor

    BF749

    Abstract: UHF transistor GHz 4 pin dual-emitter
    Text: ^£>53^31 0 0 2 4 1 ^ 2 Philips Sem iconductors T50 H A P X N AflER P H I L I P S / D I S C R E T E Product specification b7E ]>' NPN 5 GHz wideband transistor FEATURES BF749 PINNING • High power gain • Low noise figure • Gold metallization ensures excellent reliability.


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    PDF BF749 BF749 OT143R OT143R. UHF transistor GHz 4 pin dual-emitter

    dual-gate

    Abstract: rg168 str 1096 BF1101WR
    Text: DISCRETE SEMICONDUCTORS BF1101 ; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR


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    PDF BF1101 BF1101R; BF1101WR BF1101; BF1101WR MSB035 BF1101R SCA64 125004/00/02/pp16 dual-gate rg168 str 1096