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    TA4012AFE Search Results

    TA4012AFE Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TA4012AFE Toshiba TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Original PDF
    TA4012AFE Toshiba Original PDF
    TA4012AFETE85L Toshiba RF Amplifier, General purpose amplifier, Single channel, Chip, 2000 MHz, SSOP, 5-Pin Original PDF

    TA4012AFE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

    TA4012AFE

    Abstract: marking s11
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C)


    Original     		PDF TA4012AFE TA4012AFE marking s11

    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

    TA4012AFE

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA · Wide band: f = 2.0 GHz 3dB down · Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE TA4012AFE

    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

    Untitled

    Abstract: No abstract text available
    Text: TA4012AFE 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA4012AFE UHF 広帯域増幅用 特 長 • 低消費電流 : ICC = 6.5 mA • 広帯域 : f = 2.0 GHz 3dB down • 電源電圧 : VCC = 1.5 V~2.2 V 最大定格 (Ta = 25°C)


    Original     		PDF TA4012AFE

    TB62501F

    Abstract: TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS
    Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPDs z 121 Interface Drivers z 124 Motor Drivers z 129 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 141 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs


    Original     		PDF TA75S01F TG2214S TG2213S 12dBm TG2216TU 25dBm 14dBm TG2217CTB TB62501F TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    ULN2003APG china

    Abstract: tb62216 TB62216FG TC7600FNG TC62D722 ULN2803APG ULN2003APG IC CONNECTION TCV7106 TB62214 TPD1053F
    Text: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Analog Switch Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers LED Driver ICs Power Supply ICs Small-Signal MMICs (Radio-Frequency Cell Packs)


    Original     		PDF 2010/9SCE0004K TA75S393F TA75S01F ULN2003APG china tb62216 TB62216FG TC7600FNG TC62D722 ULN2803APG ULN2003APG IC CONNECTION TCV7106 TB62214 TPD1053F

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original     		PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


    Original     		PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original     		PDF BCE0003H 3sk catalog TE85L Toshiba

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original     		PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    HQFP64

    Abstract: T6K34 TB62718AF TLP3113 TLP3114 TLP3115 TPC6001 TPC6002 TPC6101
    Text: 東 芝 半 導 体 情 報 誌 アイ 2000・7月号 発 行 ／（ 株 ）東 芝セミコンダクター社 電子デバイス営業事業部 営業企画部 T E L . 0 3-3 4 5 7-3 4 0 5 F A X . 0 3-5 4 4 4-9 4 3 1 C O N T E 7 Vol.96 N T 最先端DRAM技術を共同開発


    Original     		PDF 256STN-LCD T6K34 TB62718AF TLP3113TLP3114TLP3115 13mDRAM HQFP64 T6K34 TB62718AF TLP3113 TLP3114 TLP3115 TPC6001 TPC6002 TPC6101

    TB62501F

    Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
    Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs


    Original     		PDF TA75S393F TA75S01F TA75S558F 22dBmW TG2213S 17dBmW TG2214S TG2213S. TG2216TU TB62501F tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR