TA4012AFE Search Results

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 2.2 V Weight: 0.003 g (typ.)

TA4012AFE

Abstract: marking s11
Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C)

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)

TA4012AFE

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA · Wide band: f = 2.0 GHz 3dB down · Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5~2.2 V Weight: 0.003 g (typ.)

Contextual Info: TA4012AFE 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA4012AFE UHF 広帯域増幅用 特 長 • 低消費電流 : ICC = 6.5 mA • 広帯域 : f = 2.0 GHz 3dB down • 電源電圧 : VCC = 1.5 V~2.2 V 最大定格 (Ta = 25°C)

TB62501F

Abstract: TB62207BFG tb62506fg TA1319AP 10 Segment Displays tb62506 tb62501 TB62207 TB62503 TA78033LS
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPDs z 121 Interface Drivers z 124 Motor Drivers z 129 Power Supply ICs z 132 Small-Signal MMICs (Radio-Frequency Cell Packs) z 141 117 Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

ULN2003APG china

Abstract: tb62216 TB62216FG TC7600FNG TC62D722 ULN2803APG ULN2003APG IC CONNECTION TCV7106 TB62214 TPD1053F
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Analog Switch Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers LED Driver ICs Power Supply ICs Small-Signal MMICs (Radio-Frequency Cell Packs)

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

HQFP64

Abstract: T6K34 TB62718AF TLP3113 TLP3114 TLP3115 TPC6001 TPC6002 TPC6101
Contextual Info: 東 芝 半 導 体 情 報 誌 アイ 2000・7月号 発 行 ／（ 株 ）東 芝セミコンダクター社 電子デバイス営業事業部 営業企画部 T E L . 0 3-3 4 5 7-3 4 0 5 F A X . 0 3-5 4 4 4-9 4 3 1 C O N T E 7 Vol.96 N T 最先端DRAM技術を共同開発

TB62501F

Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
Contextual Info: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or