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    Microchip Technology Inc TN0106N3-G

    MOSFET N-CH 60V 350MA TO92-3
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    Microchip Technology Inc TN0106N3-G-P013

    MOSFET N-CH 60V 350MA TO92-3
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    Microchip Technology Inc TN0106N3-G-P003

    MOSFET N-CH 60V 350MA TO92-3
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    Microchip Technology Inc TN0106N3

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    Supertex Inc TN0106N3

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    Find more TN0106 price and stock on Findchips.com

    TN0106 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN0106 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN0106 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN0106 Topaz Semiconductor N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs Scan PDF
    TN0106N2 Unknown FET Data Book Scan PDF
    TN0106N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN0106N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN0106N3 Unknown FET Data Book Scan PDF
    TN0106N3 Topaz Semiconductor 60 V, 3 ?, N-channel enhancement-mode D-MOS power FET Scan PDF
    TN0106N3-G Supertex Transistor Mosfet N-CH 60V 0.35A 3TO-92 Original PDF
    TN0106N3-G-P003 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 350MA TO92-3 Original PDF
    TN0106N3-G-P013 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 350MA TO92-3 Original PDF
    TN0106N3GP014 Supertex Transistor Mosfet N-CH 600V 7.4A 3I2PAK TUBE Original PDF
    TN0106N3P014 Supertex Transistor Mosfet N-CH 60V 0.35A 3TO-92 T/R Original PDF
    TN0106ND Unknown FET Data Book Scan PDF
    TN0106ND Topaz Semiconductor 60 V, 3 ?, N-channel enhancement-mode D-MOS power FET Scan PDF

    TN0106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiTN

    Abstract: TN0106 TN0106N3-G TN1506NW VF15
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original     		PDF TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15

    TN0106

    Abstract: TN0106N3-G
    Text: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN0106 DSFP-TN0106 A091208 TN0106 TN0106N3-G

    Untitled

    Abstract: No abstract text available
    Text: TN0106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF TN0106N3 Junc-Case125

    TN0106

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original     		PDF TN0106 TN0106 A031110

    Untitled

    Abstract: No abstract text available
    Text: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ RDS ON ID(ON) VGS(TH) BVDGS (max) (min) (max) 60V 3.0Ω 2A 2.0V TN0106 TN0106N3 TN0106N3-G 100V 3.0Ω 2A 2.0V TN0110 TN0110N3 TN0110N3-G Package Options


    Original     		PDF TN0106 TN0110 TN0106N3 TN0110N3 TN0106N3-G TN0110N3-G

    TN0106

    Abstract: TN0106N3 TN0110 TN0110N3
    Text: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 3.0Ω 2A 2.0V TN0106N3 100V 3.0Ω 2A 2.0V TN0110N3 TO-92 Features Low Threshold DMOS Technology


    Original     		PDF TN0106 TN0110 TN0106N3 TN0110N3 TN0106 TN0106N3 TN0110 TN0110N3

    TN0106

    Abstract: No abstract text available
    Text: TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF TN0106 TN0106 A020309

    B0706

    Abstract: No abstract text available
    Text: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN0106 DSPD-TO92TapingSpec B070610 B0706

    TN0110N2

    Abstract: TN0106N2 TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND
    Text: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE† 60V 3Ω 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Ω 2A 1.6V


    Original     		PDF TN0106 TN0110 TN0106N2 TN0106N3 TN0106ND TN0110N2 TN0110N3 TN0110ND TN0110N2 TN0106N2 TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND

    b0808

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original     		PDF TN0106 DSFP-TN0106 B080811 b0808

    Untitled

    Abstract: No abstract text available
    Text: TN0106N5 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)


    Original     		PDF TN0106N5

    TN0106

    Abstract: TN0106N3 TN0110 TN0110N3 TN0110ND
    Text: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 Die† 60V 3.0Ω 2A 2.0V TN0106N3 — 100V 3.0Ω 2A 2.0V TN0110N3 TN0110ND


    Original     		PDF TN0106 TN0110 TN0106N3 TN0110N3 TN0110ND TN0106 TN0106N3 TN0110 TN0110N3 TN0110ND

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces


    Original     		PDF TN0106 DSFP-TN0106 B080811

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s


    Original     		PDF TN0106 DSFP-TN0106 C080813

    Untitled

    Abstract: No abstract text available
    Text: TN0106N2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC)-55


    Original     		PDF TN0106N2 Junc-Case35

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    Untitled

    Abstract: No abstract text available
    Text: ^ Superte x inc. TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package b v dcs R ds on (m ax) (m in) VGS(th) (max) TO-39 TO-92 DICE* 60V 3ß 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q


    OCR Scan     		PDF TN0106 TN0110 TN0106N2 TN0110N2 TN0106N3 TN0110N3 TN0106ND TN0110ND TN0106/TN0110

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS WÊ 5ÖE D ö cil7laGS QQQbm.'l 7 _ SD1137, TN0106 SEM ICO NDUCTO R _ TNOllO N-CHANNEL ENHANCEMENT-MODE r 27 ” ' D-MOS POWER FETS ORDERING INFORMATION T<£226AA TO-92 Pfastfc Packsfl« ported Chip* In Waffle Pack


    OCR Scan     		PDF SD1137, TN0106 226AA SD1137BD SD1137CHP TN0106N3 TN0106ND TN0110N3 TN0110ND SO-16)

    TN0110N2

    Abstract: No abstract text available
    Text: _ TN0106 TN0110 _ Super tex inc. r . . . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BVpcs RpS ON (max) ' d(ON) (min) VgS(Mi ) (max) TO-39 TO-92 Diet 60V 3.on 2A 1.6V — TN0106N3 TN0106ND


    OCR Scan     		PDF TN0106 TN0110 TN0110N2 TN0106N3 TN0110N3 TN0106ND TN0110ND TN0106/TN0110

    Untitled

    Abstract: No abstract text available
    Text: _ TN0106 TN0110 _ Super t e x inc. T, k N _ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^G S(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92


    OCR Scan     		PDF TN0106 TN0110 TN0106N3 TN0110N3 TN0110ND 0106/TN

    Untitled

    Abstract: No abstract text available
    Text: TN0106 TN0110 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) TO-39 TO-92 DICE+ 60V 3Q 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q 2A 1.6V TN0110N2 TN0110N3


    OCR Scan     		PDF TN0106 TN0110 TN0106N2 TN0110N2 TN0106N3 TN0110N3 TN0106ND TN0110ND TN0106/TN0110

    P-DIP18P

    Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
    Text: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3


    OCR Scan     		PDF VQ2004P VQ2006J VQ2006P T0-39 tn0104n3 tn0104nd tn0106n2 tn0106n3 tn0106nd P-DIP18P VQ300IP v020 AN0130NA ANO120 VQ3001J VQ7254P

    Backlight Drivers

    Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
    Text: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs


    OCR Scan     		PDF HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 SR036 SR037 HV9904 HV9100 HV9102 HV9103 Backlight Drivers P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter

    TN0106N3

    Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
    Text: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack


    OCR Scan     		PDF O-226AÃ SD1137BD TN0106N3 TN0110N3 SD1137CHP TN0106ND TN0110ND TN0106 SD1137 TN0110 TN0110N3 TN0110ND TO226AA