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    TP0202T Price and Stock

    Vishay Siliconix TP0202T-T1

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    Bristol Electronics TP0202T-T1 2,988
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    Quest Components TP0202T-T1 2,499
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    TP0202T-T1 1,322
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    Vishay Siliconix TP0202T

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    Bristol Electronics TP0202T 2,983
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    Vishay Siliconix TP0202T T1

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    Bristol Electronics TP0202T T1 1,653
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    Vishay Intertechnologies TP0202T T1

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    Bristol Electronics TP0202T T1 1,307
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    Vishay Intertechnologies TP0202T-T1

    MOSFET Transistor, P-Channel, TO-236AB
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    Quest Components TP0202T-T1 1,045
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    Velocity Electronics TP0202T-T1 129
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    TP0202T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP0202T Temic Semiconductors P-Channel Enhancement-Mode MOS Transistor Original PDF
    TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF

    TP0202T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN804

    Abstract: TP0202T marking code vishay SILICONIX vishay siliconix code marking
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


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    PDF TP0202T 18-Jul-08 AN804 TP0202T marking code vishay SILICONIX vishay siliconix code marking

    TP0202T

    Abstract: AN804
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


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    PDF TP0202T 08-Apr-05 TP0202T AN804

    AN804

    Abstract: TP0202T
    Text: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features


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    PDF TP0202T AN804. 44505--Rev AN804 TP0202T

    AN804

    Abstract: TP0202T
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D


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    PDF TP0202T O-200 S-04279--Rev. 16-Jul-01 AN804 TP0202T

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


    Original
    PDF TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


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    PDF TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T

    TA 7061

    Abstract: TP0202T S4450
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D


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    PDF TP0202T O-236 S-44505--Rev. 06-Sep-94 TA 7061 TP0202T S4450

    TP0202T

    Abstract: TP0202K 73206 TP0202K-T1-E3 TP0202T-T1 TP0202T-T1-E3
    Text: Specification Comparison Vishay Siliconix TP0202K vs. TP0202T Description: P-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TP0202K Replaces TP0202T TP0202K-T1-E3 Lead (Pb -free Version) Replaces TP0202T-T1-E3 (Lead (Pb)-free Version)


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    PDF TP0202K TP0202T OT-23 TP0202K-T1-E3 TP0202T-T1-E3 TP0202K 10-Nov-06 TP0202T 73206 TP0202K-T1-E3 TP0202T-T1 TP0202T-T1-E3

    AN804

    Abstract: TP0202T
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 For applications information see AN804.


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    PDF TP0202T AN804. S-44505--Rev. 06-Sep-94 AN804 TP0202T

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


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    PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    FET pair n-channel p-channel

    Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to


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    PDF AN804 21-Jun-94 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
    Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone


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    PDF U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM U3810BM U4030B U4030B JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band

    TP0202T

    Abstract: Oj26
    Text: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0


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    PDF TP0202T Moto10 S-52426-- 14-Apr-97 TP0202T Oj26

    TP0202

    Abstract: No abstract text available
    Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M în (V) V G S 0 h )(V ) b (A) V -1 .3 t o - 3 V -0.41 3.5 @ V g s = - 4-5 V -1 .3 to - 3 V -0 .2 7 r D S (o n ) 1.4 -2 0 Max (Q) @ Vq s =-1 0 FEATURES BENEFITS APPLICATIONS •


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    PDF TP0202T O-236 OT-23) S-04279-- 16-Jul-01 TP0202

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.


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    PDF TP0202T AN804, -44505--Rev

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


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    PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T