Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TP3822 Search Results

    TP3822 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP3822 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    TP3822 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TP3822 Sprague N-Channel JFETS Scan PDF
    TP3822R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    TP3822 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK117BL

    Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m


    Original     		2N3069 2N3069A NDF9406 NDF9407 NDF9408 NDF9409 NDF9410 UC240 2SK117BL nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2SK105 TO92 2SK117-BL(F) PDF

    2N6485

    Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
    Text: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823


    OCR Scan     		92/TO-226AA 2N3819 TP3821 TP3822 TP3823 TPU1897 TPU1898 TPU1899 2N6485 TP3824 TP4091 TP4092 TP4093 TP4117 PDF

    TP4119

    Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
    Text: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*


    OCR Scan     		0D03bQ0 TP3369 TP3370 TP3458 91-ao O-226AA/STYLES TP4119 2n3819 field-effect transistors nj132 TP3823 TP4392 2N3819 NJ16 NJ32 PDF

    TP4221

    Abstract: No abstract text available
    Text: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS


    OCR Scan     		-92ITO -226AA 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4221 PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    tp4093

    Abstract: TMPT5401 mA 723 TMPT2907 TP4221
    Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)


    OCR Scan     		BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW68F BCW68G BCW69 BCW70 tp4093 TMPT5401 mA 723 TMPT2907 TP4221 PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


    OCR Scan     		1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor PDF

    2N5458

    Abstract: TP4221
    Text: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions


    OCR Scan     		2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 2N5458 TP4221 PDF

    TP4221

    Abstract: TP4304 TP4303
    Text: ALL E GR O M I C R O S Y S T E M S INC T> m =13 8 5 1 4 0 1 9 SP RA GU E, GS0433Û D D 0 3 b G D 3 • ALGR SEMI C O N D S / ICS 9 3 D 03600J 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH)


    OCR Scan     		GS0433Û 03600J) TP3369 TP3370 TP3458 TP3459 TP3460 2N3819 TP3821 TP3822 TP4221 TP4304 TP4303 PDF

    TP4221

    Abstract: 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC
    Text: •• - f * ALLE6R0 MICROSYSTEMS INC' 33E D • • .'••■•'v v Q5G433Ô QOGSb'ib Ô « [ AL GR ; if.: ■ ■ ïâ M S e M ■Æ ÊÊm '■"h ^ - o s T O *9 2 / T O - 2 2 6 A A ELECTRICAL CHARACTERISTICS a t T\ = 25°C A - ^GSioff Óóvlce Type V)


    OCR Scan     		Q5G433Ô 2N3819 TP3821 TP3822 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 TP4221 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC PDF