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    TSM4N60 Search Results

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    TSM4N60 Price and Stock

    Taiwan Semiconductor TSM4N60ECP-ROG

    MOSFET N-CHANNEL 600V 4A TO252
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    DigiKey TSM4N60ECP-ROG Cut Tape 7 1
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    TSM4N60ECP-ROG Digi-Reel 7 1
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    TSM4N60ECP-ROG Reel 5,000
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    Taiwan Semiconductor TSM4N60ECH-C5G

    MOSFET N-CHANNEL 600V 4A TO251
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    DigiKey TSM4N60ECH-C5G Tube 15,000
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    Taiwan Semiconductor TSM4N60ECH C5G

    Transistor MOSFET N-CH 600V 4A 3-Pin TO-251 Tube - Rail/Tube (Alt: TSM4N60ECH C5G)
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    Avnet Americas TSM4N60ECH C5G Tube 15,000
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    Verical TSM4N60ECH C5G 3,750 37
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    Arrow Electronics TSM4N60ECH C5G 3,750 52 Weeks 1
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    Chip1Stop TSM4N60ECH C5G 3,750
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    Taiwan Semiconductor TSM4N60ECP ROG

    Transistor MOSFET N-CH 600V 4A 3-Pin TO-252 Plastic T/R - Tape and Reel (Alt: TSM4N60ECP ROG)
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    Avnet Americas TSM4N60ECP ROG Reel 5,000
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    TSM4N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM4N60ECH C5G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 4A TO251 Original PDF
    TSM4N60ECP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 4A TO252 Original PDF

    TSM4N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ITO-220

    Abstract: TSM4N60CH
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 ITO-220 TSM4N60CH

    TH 2190 mosfet

    Abstract: ITO-220 TSM4N60CH 02402
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TH 2190 mosfet ITO-220 TSM4N60CH 02402

    DIODE F10

    Abstract: TSM4N60CZ TO-252 N-channel MOSFET
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 DIODE F10 TSM4N60CZ TO-252 N-channel MOSFET

    TSM4N60CH

    Abstract: power mosfet 600v 18BSC ITO-220
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TSM4N60CH power mosfet 600v 18BSC ITO-220

    TO 220 Package High current N CHANNEL MOSFET

    Abstract: mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TO 220 Package High current N CHANNEL MOSFET mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET

    TO-252 N-channel MOSFET

    Abstract: 600v 4A mosfet
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TO-252 N-channel MOSFET 600v 4A mosfet