ITO-220
Abstract: TSM4N60CH
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
ITO-220
TSM4N60CH
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TH 2190 mosfet
Abstract: ITO-220 TSM4N60CH 02402
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TH 2190 mosfet
ITO-220
TSM4N60CH
02402
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DIODE F10
Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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Original
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PDF
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
DIODE F10
TSM4N60CZ
TO-252 N-channel MOSFET
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TSM4N60CH
Abstract: power mosfet 600v 18BSC ITO-220
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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Original
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PDF
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TSM4N60CH
power mosfet 600v
18BSC
ITO-220
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TO 220 Package High current N CHANNEL MOSFET
Abstract: mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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Original
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PDF
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TO 220 Package High current N CHANNEL MOSFET
mosfet 600V 100A
TSM4N60CH
n-channel mosfet transistor
to-251
TO252
18BSC
ITO-220
TSM4N60CZ
TO-252 N-channel power MOSFET
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TO-252 N-channel MOSFET
Abstract: 600v 4A mosfet
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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Original
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PDF
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TO-252 N-channel MOSFET
600v 4A mosfet
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