NTE5629

Contextual Info: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed

TO202N

Abstract: NTE272 NTE273 ic 555 audio amplifiers
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

npn general purpose high voltage amplifier

Abstract: NTE49 NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

Complementary Darlington Audio Power Amplifier

Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

darlington complementary power amplifier

Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

NTE171

Contextual Info: NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

Contextual Info: FS0802.E/F SENSITIVE GATE SCR TO202-1 E On-State Current Gate Trigger Current 8 Amp < 200 µA TO202-3 (F) Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled R ectifier use a high performance PNPN technology. MT1 MT2 MT1 G MT2 G These parts are intended for general

D01PA

Contextual Info: www.i-t.su info@i-t.su òåë: 095 785-48-05, 739-09-95 Ðàäèàòîðû òèïà U ñ âûâîäàìè ïîä ïàéêó Ðàäèàòîðû ïðåäíàçíà÷åíû äëÿ ýëåìåíòîâ â êîðïóñå TO220 è TO202. Èìåþò âûâîäû ïîä ïàéêó.

Contextual Info: FT04.E/F LOGIC LEVEL TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 This series of TRIACs uses a high performance PNPN technology. MT1 MT2 G MT1 MT2 G These parts are intended for general

rgk 20/2

Abstract: triac to-202-3 Fagor triacs FT04 triac scr circuit scr 209
Contextual Info: FT04.E/F STANDARD TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 This series of TRIACs uses a high performance PNPN technology. MT1 MT2 G MT1 MT2 G These parts are intended for general

NTE191

Abstract: NTE240
Contextual Info: NTE191 NPN & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers.

nte268

Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

Contextual Info: Z04 4 A Triacs Main features TO202-3 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 3 to 25 mA Order codes Part Number Marking Z04xxyF(1) Z04xxyF(1) 1. xx = sensitivity, y = voltage Description A2 The Z04 series is suitable for general purpose AC

NTE322

Abstract: 27mhz rf amplifier NPN transistor choke 380
Contextual Info: NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.

NTE5457

Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be

Aluminum alloy 8053

Abstract: TO202 package TO202 thermal resistance NTE406
Contextual Info: NTE406 Hardware Heat Sink for TO202 Type Package Description: The NTE406 is a compact, slide-on heat sink with device catch for use with TO202 type packages. Specifications: Finish . . . . . . . . . . . . . . . . . . Pre-Black Anodize Material . . . . . . . . . . . . . . . . . . . Aluminum Alloy

SCR TRIGGER PULSE

Abstract: SCR TRIGGER PULSE circuit SCR PNPN General electric SCR TO202 package FS0802 scr 209
Contextual Info: FS0802.E/F SENSITIVE GATE SCR TO202-1 E On-State Current Gate Trigger Current 8 Amp < 200 µA TO202-3 (F) Off-State Voltage 200 V ÷ 600 V A A These series of Silicon Controlled R ectifier use a high performance PNPN technology. K K A G A G These parts are intended for general

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

heat sink to220

Abstract: NTE402 Aluminum alloy 8053 TO126 TO126 transistor TO127 TO202 TO218 data-sheet to218 plastic NTE403
Contextual Info: NTE402 Hardware Heat Sink for Mounting 2 Plastic Power Types TO3P, TO126, TO127, TO202, TO218, TO220 Description: The NTE402 is a lightweight, channel style heat sink with a wide mounting surface for plastic power semiconductors. This device accomodates one or two devices and is excellent for circuit board

NTE188

Abstract: NTE189
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

pnp 300v

Abstract: NTE296
Contextual Info: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:

TO247 package

Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise

NTE211

Abstract: NTE210
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications