TO202N

Abstract: NTE272 NTE273 ic 555 audio amplifiers
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Complementary Darlington Audio Power Amplifier

Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

NTE2732A

Abstract: NTE3880 Nte388
Contextual Info: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate

Contextual Info: NTE273 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25G h(FE) Max. Current gain.

NTE4256

Contextual Info: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1

NTE2732A

Abstract: NTE2732 NTE3880
Contextual Info: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

NPN S2e

Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
Contextual Info: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

Contextual Info: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7

NTE970

Abstract: nte956 NTE935 NTE4011B NTE7400 NTE4069 TP007 NTE955M NTE4011 NTE978
Contextual Info: 1993-2012.qxp:QuarkCatalogTempNew 9/11/12 8:54 AM Page 1993 25 Integrated Circuits ICs and Thermal Management TEST & MEASUREMENT Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.