Untitled
Abstract: No abstract text available
Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-25DA
UJ11jU
44dBm
-45dBc
32dBm
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J221
Abstract: FMC2122LN-03
Text: F | . S Mu. K-Band Power GaAs Modules F M C 2 1 2 2 L N - 3 j U . . r UJ11j U FEATU RES • • • • • • • High Output Power: P1CjB • 12dBm Typ. High Gain: G-j^ b = 12dB(Typ.) Low In/Out VSWR Low Noise: NF - 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz
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MC2122
12dBm
FMC2122LN-03
-15dBm
FMC2122LN-
J221
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FLM3742-12D
Abstract: FLM3742-12DA
Text: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-12DA
41dBm
-45dBc
30dBm
FLM3742-12DA
FLM3742-12D
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Untitled
Abstract: No abstract text available
Text: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC141501-01
UJ11jU
31dBm
FMC141501-01
12dBm
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Untitled
Abstract: No abstract text available
Text: F| FLM7785-18DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz
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FLM7785-18DA
UJ11jU
-45dBc
FLM7785-18DA
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Untitled
Abstract: No abstract text available
Text: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-8D
UJ11jU
39dBm
-45dBc
28dBm
FLM6472-8D
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FLM7177-18DA
Abstract: U/25/20/TN26/15/850/FLM6472-18DA
Text: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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FLM7177-18DA
UJ111
-45dBc
FLM7177-18DA
U/25/20/TN26/15/850/FLM6472-18DA
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FLM6472-12d
Abstract: FLM6472-12DA
Text: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-12DA
41dBm
-45dBc
30dBm
FLM6472-12DA
FLM6472-12d
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Untitled
Abstract: No abstract text available
Text: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-6D
UJ11jU
-45dBc
27dBm
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FLM1011-4C
Abstract: No abstract text available
Text: FLM1011-4C RI lîrrQi I Internally Matched Power GaAs FETs r UJ11jU FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-4C
UJ11jU
FLM1011-4C
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Untitled
Abstract: No abstract text available
Text: FLM1011-4D RI lîrrQi I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q
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FLM1011-4D
UJ11jU
-45dBc
25dBm
FLM1011-4D
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Untitled
Abstract: No abstract text available
Text: FLM5964-35DA m lm i I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 45.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-35DA
UJ11jU
-45dBc
MA078
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FLM7177-4D
Abstract: CI 7400 GaAs FETs
Text: RI lîrrQi r UJ11jU F L M 7 1 7 7 -4 D Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm (Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 7.1 ~ 7.7GHz
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FLM7177-4D
36dBm
-45dBc
25dBm
Voltag47
FLM7177-4D
CI 7400
GaAs FETs
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Untitled
Abstract: No abstract text available
Text: FLM7785-8C P lim x ril r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 27% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q
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FLM7785-8C
UJ11jU
39dBm
7785-8C
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FLM6472-18DA
Abstract: No abstract text available
Text: F| FLM6472-18DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz
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FLM6472-18DA
-45dBc
VGS187
FLM6472-18DA
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FLM7177-8D
Abstract: 8d 139 231
Text: FLM7177-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz
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FLM7177-8D
39dBm
-45dBc
28dBm
FLM7177-8D
8d 139 231
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FLM7177-12DA
Abstract: No abstract text available
Text: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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FLM7177-12DA
UJ115
41dBm
-45dBc
30dBm
Voltage077
FLM7177-12DA
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FCN-704J014-AU
Abstract: No abstract text available
Text: cPT C II O IH r UJ11J U FUJITSU TAKAMISAWA CONNECTOR CATALOG PC BOARD CONNECTORS 700 SERIES • FEATURES The 700 series connector has a superior ejector with a unique flexible latch. Terminals are palladium plated and have an excellent cost performance ratio. The solder dip
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UJ11J
sL94V-0)
FCN-704J010-AU/0
FCN-704J014-AU/0
FCN-704J016-AU/0
FCN-704J020-AU/0
FCN-704J026-AU/0
FCN-704J030-AU/0
FCN-704J034-AU/0
FCN-704J040-AU/0
FCN-704J014-AU
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Untitled
Abstract: No abstract text available
Text: P, . FLM1011-8D Internally Matched Power GaAs FETs r UJ11jU FEATURES • High Output Power: P-idB = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Low IM3 = -45dBc@Po = 28dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q
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FLM1011-8D
UJ11jU
-45dBc
28dBm
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FLL101ME
Abstract: No abstract text available
Text: FLLIOIME m ir r c ii r UJ11jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1c|B=29.5dBnn Typ. • • • • High Gain: G-|C|b = 13-5cIB (Typ) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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UJ11jU
13-5cIB
FLL101ME
FLL101ME
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FMC1819P1-01
Abstract: No abstract text available
Text: FMC1819P1-01 p. cs . Ku, K-Band Power GaAs Modules r UJ11jU FEATURES • • • • • • High Output Power: P-i ^ b = 21dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1819P1-01
21dBm
FMC1819P1-01
10dBm
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fujitsu l-band power fets
Abstract: No abstract text available
Text: Filinoli J FLL17IME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1c|B=32.5dBnn Typ. High Gain: G-|C|g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL171ME is a Power GaAs FET that is specifically designed to
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FLL17IME
FLL171ME
fujitsu l-band power fets
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Untitled
Abstract: No abstract text available
Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q
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FLM5964-25DA
UJ11bU
44dBm
-45dBc
32dBm
5964-25D
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Untitled
Abstract: No abstract text available
Text: FLM ioii-2 m in a li Internally Matched Power GaAs FETs r UJ11ÒU FEATURES • • • • • • High Output Power: P ^ b = 33.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 28% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-2
600mA
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