UPG103A

Abstract: uPG103 UPG103B UPG103P TCB 44
Contextual Info: SEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication

Contextual Info: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or