UPG106B
Abstract: BF08 UPG106P
Text: SEC 2.5 GHz WIDE-BAND AGC AMPLIFIER FEATURES OUTLINE DIM ENSIONS UPG106B UPG106P Units in mm O UTLINE BF08 • W ID E O P E R A T IN G F R E Q U E N C Y RAN G E : f = 100 K H z to 2.5 G H z • H IG H P O W E R G A IN : G p = 2 0 dB TYP • G A IN C O N T R O L R A N G E : G agc = 35 d B TYP
|
OCR Scan
|
UPG106B
UPG106P
UPG106B,
BF08
UPG106P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2.5 GHz WIDE-BAND AGC AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG106B UPG106P Units in mm OUTLINE BF08 • W ID E O PERATING FREQ UENC Y RANGE: f = 100 KHz to 2.5 GHz • H IG H POW ER GAIN: G p = 20 dB TYP • GAIN C O N TR O L RANGE: G agc = 35 dB TYP DESCRIPTION AND APPLICATIONS
|
OCR Scan
|
UPG106B
UPG106P
UPG106B
UPG106B,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2.5 GHz WIDE-BAND AGC AMPLIFIER UPG106B UPG106P POWER GAIN vs. FREQUENCY FEATURES_ • WIDE OPERATING FREQUENCY RANGE: f= 100 to 2.5 GHz • HIGH POWER GAIN: G p = 20 dB TYP • GAIN CONTROL RANGE: G agc = 35 dB TYP • WIDE OPERATING TEMPERATURE RANGE
|
OCR Scan
|
UPG106B
UPG106P
JPG106B
UPG106B,
UPG106P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NEC 2.5 GHz WIDE-BAND AGC AMPLIFIER UPG106B UPG106P PRELIMINARY OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE BF08 • W ID E O P E R A T IN G F R E Q U E N C Y R A N G E : f = 100 K H z to 2.5 G H z • H IG H P O W E R G AIN : G p = 20 d B T Y P • G AIN C O N T R O L R A N G E : G a g c = 35 d B T Y P
|
OCR Scan
|
UPG106B
UPG106P
UPG106B,
SS8-3500
34-8393/FAX
NOTICE-1483
|
PDF
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
|
PDF
|
prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
|
OCR Scan
|
|
PDF
|
