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    VPT09050

    Abstract: *08P06P transistor SMD 352
    Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3


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    SPD08P06P SPU08P06P VPT09050 VPT09051 P-T0252 Q67040-S4153-A2 P-T0251-3-1 Q67040-S4154-A2 VPT09050 *08P06P transistor SMD 352 PDF

    VPT09050

    Abstract: VPT09051
    Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A


    OCR Scan
    SPUX5N60S5 SPDX5N60S5 VPT09051 VPT09050 X5N60S5 P-T0251-3-1 P-T0252 VPT09050 VPT09051 PDF

    VPT09051

    Abstract: transistor ag qs VPT09050
    Text: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A


    OCR Scan
    SPUX2N60S5 SPDX2N60S5 VPT09051 VPT09050 X2N60S5 P-T0251-3-1 P-T0252 VPT09051 transistor ag qs VPT09050 PDF

    smd diode code pj 70

    Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
    Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V


    OCR Scan
    SPD30N03 SPU30N03 VPT09Q50 VPT09051 P-T0252 Q67040-S4144-A2 P-T0251-3-1 Q67040-S4146-A2 smd diode code pj 70 uras 10 pj 68 SMD diode smd diode code pj 50 PDF

    Siemens DIODE E 1220

    Abstract: VPT09050
    Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS


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    SPD28N03L SPU28N03L VPT09050 VPT09051 P-T0252 Q67040-S4139-A2 P-T0251 Q67040-S4142-A2 Siemens DIODE E 1220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß


    OCR Scan
    08P06P SPD08P06P P-T0252 Q67040-S4153-A2 P-T0251-3-1 SPU08P06P 67040-S4154-A2 235b05 G133S60 PDF

    Diode smd code sm 97

    Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
    Text: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current


    OCR Scan
    SPD09P06PL SPU09P06PL VPT09050 VPT09051 SPD09P06PL P-T0252 Q67042-S4007 SPU09P06PL P-T0251-3-1 Q67042-S4020 Diode smd code sm 97 VPT09051 Q67042-S4020 PDF