VPT09050
Abstract: *08P06P transistor SMD 352
Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3
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SPD08P06P
SPU08P06P
VPT09050
VPT09051
P-T0252
Q67040-S4153-A2
P-T0251-3-1
Q67040-S4154-A2
VPT09050
*08P06P
transistor SMD 352
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VPT09050
Abstract: VPT09051
Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A
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SPUX5N60S5
SPDX5N60S5
VPT09051
VPT09050
X5N60S5
P-T0251-3-1
P-T0252
VPT09050
VPT09051
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VPT09051
Abstract: transistor ag qs VPT09050
Text: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A
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SPUX2N60S5
SPDX2N60S5
VPT09051
VPT09050
X2N60S5
P-T0251-3-1
P-T0252
VPT09051
transistor ag qs
VPT09050
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smd diode code pj 70
Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V
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SPD30N03
SPU30N03
VPT09Q50
VPT09051
P-T0252
Q67040-S4144-A2
P-T0251-3-1
Q67040-S4146-A2
smd diode code pj 70
uras 10
pj 68 SMD diode
smd diode code pj 50
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Siemens DIODE E 1220
Abstract: VPT09050
Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS
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SPD28N03L
SPU28N03L
VPT09050
VPT09051
P-T0252
Q67040-S4139-A2
P-T0251
Q67040-S4142-A2
Siemens DIODE E 1220
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Untitled
Abstract: No abstract text available
Text: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß
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08P06P
SPD08P06P
P-T0252
Q67040-S4153-A2
P-T0251-3-1
SPU08P06P
67040-S4154-A2
235b05
G133S60
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Diode smd code sm 97
Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
Text: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current
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SPD09P06PL
SPU09P06PL
VPT09050
VPT09051
SPD09P06PL
P-T0252
Q67042-S4007
SPU09P06PL
P-T0251-3-1
Q67042-S4020
Diode smd code sm 97
VPT09051
Q67042-S4020
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