VPT09050
Abstract: *08P06P transistor SMD 352
Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3
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SPD08P06P
SPU08P06P
VPT09050
VPT09051
P-T0252
Q67040-S4153-A2
P-T0251-3-1
Q67040-S4154-A2
VPT09050
*08P06P
transistor SMD 352
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transistor marking smd 7c
Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3
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SPUX7N60S5
SPDX7N60S5
VPT09D51
VPT09050
X7N60S5
P-T0251-3-1
P-T0252
transistor marking smd 7c
TRANSISTOR SMD MARKING CODE ag
VPT09050
X7N60S5
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VPT09050
Abstract: No abstract text available
Text: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 V P T 0905 1 • Avalanche rated • dv/dt rated • 150°C operating temperature Type SPUX7N60S5 ^bs 600 V 0.8 A
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SPUX7N60S5
SPDX7N60S5
VPT09050
X7N60S5
P-T0251-3-1
P-T0252
VPT09050
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VPT09050
Abstract: VPT09051
Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A
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SPUX5N60S5
SPDX5N60S5
VPT09051
VPT09050
X5N60S5
P-T0251-3-1
P-T0252
VPT09050
VPT09051
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A
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SPD02N60
SPU02N60
VPT09050
P-T0252
Q67040-S4133
P-T0251
Q67040-S4127-A2
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VPT09051
Abstract: transistor ag qs VPT09050
Text: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A
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SPUX2N60S5
SPDX2N60S5
VPT09051
VPT09050
X2N60S5
P-T0251-3-1
P-T0252
VPT09051
transistor ag qs
VPT09050
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P-T0251
Abstract: spd08n
Text: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.
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SPD08N10
SPU08N10
SPU08N10
P-T0252
P-T0251
Q67000-.
P-T0251
spd08n
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Siemens DIODE E 1220
Abstract: VPT09050
Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS
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SPD28N03L
SPU28N03L
VPT09050
VPT09051
P-T0252
Q67040-S4139-A2
P-T0251
Q67040-S4142-A2
Siemens DIODE E 1220
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SPUX3N60S5
Abstract: on semiconductor marking code dpack VPT09050
Text: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature
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SPUX3N60S5
SPDX3N60S5
SPDX3N60S5
VPT09D51
VPT09050
X3N60S5
P-T0251-3-1
P-T0252
on semiconductor marking code dpack
VPT09050
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Diode smd code sm 97
Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
Text: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current
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SPD09P06PL
SPU09P06PL
VPT09050
VPT09051
SPD09P06PL
P-T0252
Q67042-S4007
SPU09P06PL
P-T0251-3-1
Q67042-S4020
Diode smd code sm 97
VPT09051
Q67042-S4020
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