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    SPD08N10 Search Results

    SPD08N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD08N10 Infineon Technologies Power MOSFET, 100V, DPAK, RDSon=0.3 ?, 8.4A, NL Original PDF
    SPD08N10 Siemens Original PDF
    SPD08N10 Siemens SIPMOS Power Transistor Original PDF
    SPD08N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPD08N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d2422

    Abstract: P-TO252 SPD08N10 SPU08N10
    Text: SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Ω P-TO252 Q67000-. . . - . . SPU08N10 100 V 8.4 A


    Original     		SPD08N10 SPU08N10 P-TO252 Q67000-. P-TO251 23/Jan/1998 d2422 P-TO252 SPD08N10 SPU08N10 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    08N10

    Abstract: P-TO252 SPD08N10 SPU08N10 A16H
    Text: Preliminary Data SPD 08N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		08N10 SPD08N10 P-TO252 Q67040-S4126-A2 SPU08N10 P-TO251 Q67040-S4118-A2 08N10 P-TO252 SPD08N10 SPU08N10 A16H PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original     		O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l PDF

    P-TO252

    Abstract: SPD08N10 SPU08N10
    Text: SPD 08N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		08N10 SPD08N10 P-TO252 Q67040-S4126 SPU08N10 P-TO251 Q67040-S4118-A2 P-TO252 SPD08N10 SPU08N10 PDF

    P-T0251

    Abstract: spd08n
    Text: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.


    OCR Scan     		SPD08N10 SPU08N10 SPU08N10 P-T0252 P-T0251 Q67000-. P-T0251 spd08n PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		08N10 SPD08N10 P-T0252 Q67040-S4126 SPU08N10 P-T0251 Q67040-S4118-A2 S35bQ5 Q133777 SQT-89 PDF