RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0300Z
16-Mbit
1048576-words
16-bit,
52pin
RENESAS tft application notes
R1LV1616RBG-5S
R1LV1616RSA-5S
uTSOP
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PDF
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Untitled
Abstract: No abstract text available
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
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PDF
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0.4mm pitch BGA
Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
0.4mm pitch BGA
52-pin uTSOP
din 6887
R1LV1616RBG-5S
R1LV1616RSA-5S
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PDF
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Untitled
Abstract: No abstract text available
Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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V3216R
wordx16bit)
REJ03C0215-0300Z
R1WV3216R
32-Mbit
2097152-words
16-bit,
16Mbit
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PDF
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52PTG
Abstract: R1LV1616R R1LV1616R Series uTSOP
Text: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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R1LV1616R
REJ03C0101-0100Z
wordx16bit)
16-Mbit
1048576-words
16-bit,
52pin
52PTG
R1LV1616R Series
uTSOP
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PDF
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R1LV1616RBA-5SI
Abstract: R1LV1616R R1LV1616RBA uTSOP
Text: R1LV1616RBA-5SI 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0340-0001 Rev.0.01 2007.10.31 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616RBA-5SI
wordx16bit
REJ03C0340-0001
R1LV1616R
16-Mbit
1048576-words
16-bit,
R1LV1616RBA
48balls
R1LV1616RBA-5SI
uTSOP
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PDF
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52-pin uTSOP
Abstract: 52-pin TSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0201Z Rev.2.01 2005.03.22 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0201Z
16-Mbit
1048576-words
16-bit,
52pin
52-pin uTSOP
52-pin TSOP
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PDF
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52-pin uTSOP
Abstract: No abstract text available
Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0200Z Rev.2.00 2005.11.07 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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V3216R
wordx16bit)
REJ03C0215-0200Z
R1WV3216R
32-Mbit
2097152-words
16-bit,
16Mbit
52-pin uTSOP
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PDF
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Untitled
Abstract: No abstract text available
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary This product is under development and its specification might be changed without any notice. R1LV1616R Series REJ03C0101-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
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R1LV1616R
wordx16bit)
REJ03C0101-0002Z
16-Mbit
1048576-words
16-bit,
52pin
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PDF
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52PTG
Abstract: R1LA1616RBG-7SI R1LA1616RBG-8SI R1LA1616RSD-7SI R1LA1616RSD-8SI
Text: Preliminary This product is under development and its specification might be changed without any notice. R1LA1616R Series REJ03C0100-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LA1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
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R1LA1616R
REJ03C0100-0002Z
wordx16bit)
16-Mbit
1048576-words
16-bit,
52pin
52PTG
R1LA1616RBG-7SI
R1LA1616RBG-8SI
R1LA1616RSD-7SI
R1LA1616RSD-8SI
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PDF
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MAKING A10 BGA
Abstract: 52PTG 52-pin uTSOP R1WV3216R
Text: R1W V3216R Series REJ03C0215-0100Z Rev.1.00 2004.4.13 32Mb superSRAM 2M wordx16bit Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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V3216R
REJ03C0215-0100Z
wordx16bit)
R1WV3216R
32-Mbit
2097152-words
16-bit,
16Mbit
MAKING A10 BGA
52PTG
52-pin uTSOP
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PDF
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52-pin uTSOP
Abstract: 52-pin TSOP 52PTG R1WV3216R RENESAS tft application notes uTSOP
Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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Original
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V3216R
wordx16bit)
REJ03C0215-0300Z
R1WV3216R
32-Mbit
2097152-words
16-bit,
16Mbit
52-pin uTSOP
52-pin TSOP
52PTG
RENESAS tft application notes
uTSOP
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev.1.1 CMOS SERIAL E2PROM S-29UXX1A Series 2 The S-29UXX1A Series is low power 1K/2K/4K-bit serial E PROM with a low operating voltage range. They are organized as 64-wordX16-bit, 128-wordX16-bit and 256-wordX16-bit, respectively. Each is capable of sequential read, where addresses are automatically incremented in 16bit blocks. The instruction code is compatible with the NM93CSXX
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S-29UXX1A
64-wordX16-bit,
128-wordX16-bit
256-wordX16-bit,
16bit
NM93CSXX
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29f1615
Abstract: MX29f1615
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
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MX29F1615
16M-BIT
90/100/120ns
PM0615
JUN/15/2001
29f1615
MX29f1615
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PDF
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324T
Abstract: 2MWx16bit
Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW322/324T/B
32M-BIT
X8/X16]
X8/X16)
70/90ns
70/85ns
AuP44
APR/17/2002
APR/18/2002
MAY/31/2002
324T
2MWx16bit
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)
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OCR Scan
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KM616V1002A
WORDx16
KM616V1002A-12
110mA
KM616V1002A-15:
100mA
KM616V1002A-17:
KM616V1002A-20
KM616VF
I/016
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)
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OCR Scan
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KM616V1002A
WORDx16
KM616V1002A-12
110mA
KM616V1002A-15:
100mA
KM616V1002A-17
KM616V1002A-20
KM616V1002A
576-bit
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PDF
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256x16* STATIC RAM
Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)
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OCR Scan
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KM616V1002A
WORDx16
KM616V1002A-12
110mA
KM616V1002A-15
100mA
KM616V1002A-17
KM616V1002A-20
KM616V1002AJ
44-SOJ-400
256x16* STATIC RAM
256x16 soj 3.3v
256x16 sram
KM616V1002A
44-TSOP
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Information CMOS SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) Operating : KM6161002A-12 : 250mA (max.)
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OCR Scan
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KM6161002A
WORDx16
KM6161002A-12
250mA
KM6161002A-15:
230mA
KM6161002A-17
220mA
KM6161002A-20
210mA
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PDF
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KM6161002A-12
Abstract: KM6161002AJ KM6161002A KM6161002A-15 KM6161002A-20 KM6161002AT
Text: Advanced Information CM O S SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) . Operating : KM6161002A-12 : 250mA (max.)
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OCR Scan
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KM6161002A
WORDx16
KM6161002A-12
250mA
KM6161002A-15:
230mA
KM6161002A-17:
220mA
KM6161002A-20
210mA
KM6161002A-12
KM6161002AJ
KM6161002A
KM6161002A-15
KM6161002A-20
KM6161002AT
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PDF
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HN27C4096G-10
Abstract: HN27C4096G-12 HN27C4096 HN27C4096CC-10 HN27C4096CC-12 HN27C4096G-15 HN27C4096G10 HN27C4096G12
Text: HN27C4096G/CC Series 262144-wordX16-bit CMOS UV Erasable and Programmable ROM T he H itachi H N 27C 4096G /C C is a 4-M b it ultraviolet erasable and electrically programmable RO M , featu rin g high sp eed and low p o w er dissipation. Fabricated on advanced fine process
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OCR Scan
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HN27C4096G/CC
262144-wordX16-bit
HN27C4096
16/32-bit
cerdip-40pin
JLCC-44
HN27C4096G-10
600-mil
HN27C4096G-12
HN27C4096CC-10
HN27C4096CC-12
HN27C4096G-15
HN27C4096G10
HN27C4096G12
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PDF
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44-SOJ-400
Abstract: No abstract text available
Text: Advanced Information CMOS SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) Operating : KM6161002A-12 : 250mA (max.)
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OCR Scan
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KM6161002A
WORDx16
KM6161002A-12
250mA
KM6161002A-15:
230mA
KM6161002A-17:
220mA
KM6161002A-20:
210mA
44-SOJ-400
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PDF
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00F1H
Abstract: No abstract text available
Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
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OCR Scan
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MX29F1
100/120/150ns
-100mA
100mA
100ns
00F1H
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PDF
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