52PTG
Abstract: 52PTG-A D5227
Text: JEITA Package Code P-TSOP 2 52-8.89x10.79-0.40 RENESAS Code PTSB0052LB-A *1 Previous Code 52PTG-A MASS[Typ.] 0.3g D 52 27 A1 E *2 HE L A2 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Detail F
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89x10
PTSB0052LB-A
52PTG-A
52PTG
52PTG-A
D5227
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RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0300Z
16-Mbit
1048576-words
16-bit,
52pin
RENESAS tft application notes
R1LV1616RBG-5S
R1LV1616RSA-5S
uTSOP
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Untitled
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT 2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description M6MGB/T321S8TP provides for Software Lock Release
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M6MGB/T321S8TP
432-BIT
16-BIT/4
304-WORD
608-BIT
288-WORD
16-BIT/1
576-WORD
M6MGB/T321S8TP
32M-bit
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Untitled
Abstract: No abstract text available
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
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R1LV1616R
Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M5M5W817
Abstract: M5M5W817KT IH27
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R1LV0816A
Abstract: 52PTG
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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74h 132
Abstract: WA.N4
Text: Renesas LSIs Preliminary M5M29KB/T641ATP Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T641ATP provides for Software Lock Release function.
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M5M29KB/T641ATP
864-BIT
608-WORD
304-WORD
16-BIT)
M5M29KB/T641ATP
864-bit
REJ03C0236
74h 132
WA.N4
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ic tlp 759
Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Text: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.
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PVQN0020KB-A
PVQN0052KA-A
PVQN0064LB-A
PVQN0032KA-A
PVQN0032KB-A
PVQN0068KA-A
PVQN0048KA-A
PVQN0052LE-A
PVQN0036KA-A
JHB-PBG3131173
ic tlp 759
SL-BC050515TJ-1
JHB-TQ121214-M
L196-49
L196-65A
PTB54C
SL-BG060615TJ-2
SL-BG060615TJ-1
ST-TQ070710TJ-1
PVQN0020KB-A
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R1WV6416R
Abstract: 32MB SRAM 48P3R 52PTG 52-pin uTSOP 52-pin TSOP
Text: Preliminary R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0001 Preliminary Rev.0.01 2008.03.24 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
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R1WV6416R
16bit
REJ03C0368-0001
64-Mbit
304-word
16-bit,
48-pin
32MB SRAM
48P3R
52PTG
52-pin uTSOP
52-pin TSOP
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0.4mm pitch BGA
Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
0.4mm pitch BGA
52-pin uTSOP
din 6887
R1LV1616RBG-5S
R1LV1616RSA-5S
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Untitled
Abstract: No abstract text available
Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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V3216R
wordx16bit)
REJ03C0215-0300Z
R1WV3216R
32-Mbit
2097152-words
16-bit,
16Mbit
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M5M5J167KT
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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52-pin TSOP
Abstract: 52PTG
Text: Renesas LSIs M6MGB/T641S4TP 67,108,864-BIT 4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT CMOS FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT / 524,288-WORD BY 8BIT) CMOS SRAM Stacked- µMCP (micro Multi Chip Package) DESCRIPTION The M6MGB/T641S4TP is a Stacked micro Multi Chip
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M6MGB/T641S4TP
864-BIT
304-WORD
16-BIT
608-WORD
304-BIT
144-WORD
288-WORD
M6MGB/T641S4TP
52-pin TSOP
52PTG
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52PTG
Abstract: R1LV1616R R1LV1616R Series uTSOP
Text: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
REJ03C0101-0100Z
wordx16bit)
16-Mbit
1048576-words
16-bit,
52pin
52PTG
R1LV1616R Series
uTSOP
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52-pin TSOP
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M5M29KB/T331ATP Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T331ATP provides for Software Lock Release function.
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M5M29KB/T331ATP
432-BIT
304-WORD
152-WORD
16-BIT)
M5M29KB/T331ATP
432-bit
REJ03C0235
52-pin TSOP
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48P3R
Abstract: 52PTG R1LV3216R R1LV3216RSA-5S R1LV3216RSA-7S R1LV3216RSD-5S
Text: Preliminary R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0001 Preliminary Rev.0.01 2008.03.24 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
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R1LV3216R
16bit
REJ03C0367-0001
32-Mbit
152-word
16-bit,
48-pin
48P3R
52PTG
R1LV3216RSA-5S
R1LV3216RSA-7S
R1LV3216RSD-5S
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Untitled
Abstract: No abstract text available
Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
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R1WV6416R
16bit
REJ03C0368-0100
64-Mbit
304-word
16-bit,
48-pin
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48P3R
Abstract: 52PTG R1LV3216R R1LV3216RSA-5S R1LV3216RSA-7S R1LV3216RSD-5S
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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uTSOP
Abstract: 52-pin TSOP 48P3R 52PTG R1WV6416R 52-pin uTSOP
Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
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R1WV6416R
16bit
REJ03C0368-0100
64-Mbit
304-word
16-bit,
48-pin
uTSOP
52-pin TSOP
48P3R
52PTG
52-pin uTSOP
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Untitled
Abstract: No abstract text available
Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
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R1WV6416R
16bit
REJ03C0368-0100
64-Mbit
304-word
16-bit,
48-pin
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524,288
Abstract: 32M Nonvolatile SRAM
Text: Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT 2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description M6MGB/T321S8TP provides for Software Lock Release
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M6MGB/T321S8TP
432-BIT
16-BIT/4
304-WORD
608-BIT
288-WORD
16-BIT/1
576-WORD
M6MGB/T321S8TP
32M-bit
524,288
32M Nonvolatile SRAM
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2002.5.28 Ver. 1.0 M5M5J167KT - 70HI 16777216-BIT 1048576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5J167KT is a f amily of low v oltage 16Mbit static RAMs organized as 1048576-words by 16-bit, f abricated by Mitsubishi's
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M5M5J167KT
16777216-BIT
1048576-WORD
16-BIT)
16Mbit
1048576-words
16-bit,
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M5M5W817KT
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,
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M5M5W817KT
8388608-BIT
524288-WORD
16-BIT
10485776-WORD
524288-words
1048576-words
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