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    R1WV6416R Search Results

    R1WV6416R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1WV6416RSA-5SI#B0 Renesas Electronics Corporation Low Power SRAM, TSOP(1), /Tray Visit Renesas Electronics Corporation
    R1WV6416RBG-5SI#S0 Renesas Electronics Corporation Low Power SRAM, TFBGA, /Embossed Tape Visit Renesas Electronics Corporation
    R1WV6416RSD-7SR#B0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Tray Visit Renesas Electronics Corporation
    R1WV6416RBG-5SI#B0 Renesas Electronics Corporation Low Power SRAM, TFBGA, /Tray Visit Renesas Electronics Corporation
    R1WV6416RSD-7SI#S0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Embossed Tape Visit Renesas Electronics Corporation
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    R1WV6416R Price and Stock

    Rochester Electronics LLC R1WV6416RBG-7SI-B0

    IC SRAM 64MBIT PARALLEL 48TFBGA
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    DigiKey R1WV6416RBG-7SI-B0 Bulk 3
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    Rochester Electronics LLC R1WV6416RSA-7SR-B0

    IC SRAM 64MBIT PARALLEL 48TSOP I
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    DigiKey R1WV6416RSA-7SR-B0 Tray 3
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    Renesas Electronics Corporation R1WV6416RSA-7SR-B0

    IC SRAM 64MBIT PARALLEL 48TSOP I
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    Renesas Electronics Corporation R1WV6416RSD-5SI-B0

    IC SRAM 64MBIT PAR 52TSOP II
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    Renesas Electronics Corporation R1WV6416RBG-5SI-S0

    IC SRAM 64MBIT PARALLEL 48TFBGA
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    Find more R1WV6416R price and stock on Findchips.com

    R1WV6416R Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1WV6416R Renesas Technology 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) Original PDF
    R1WV6416RBG-5SI Renesas Technology Asynchronous SRAM; Organization (word): 4M; Organization (bit): x 16; Memory capacity (bit): 64M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48) Original PDF
    R1WV6416RBG-5SI#B0 Renesas Electronics America Integrated Circuits (ICs) - Memory - 64M MCP(2X32M) ADV.SRAM 3V FBGA Original PDF
    R1WV6416RBG-5SI#S0 Renesas Electronics America Integrated Circuits (ICs) - Memory - 64M MCP(2X32M) ADV.SRAM 3V FBGA Original PDF
    R1WV6416RBG-5SR Renesas Technology Asynchronous SRAM; Organization (word): 4M; Organization (bit): x 16; Memory capacity (bit): 64M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Original PDF
    R1WV6416RBG-7SI Renesas Technology Asynchronous SRAM; Organization (word): 4M; Organization (bit): x 16; Memory capacity (bit): 64M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48) Original PDF
    R1WV6416RBG-7SR Renesas Technology Asynchronous SRAM; Organization (word): 4M; Organization (bit): x 16; Memory capacity (bit): 64M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Original PDF
    R1WV6416RSA-5SI Renesas Technology Asynchronous SRAM; Organization (word): 8M / 4M; Organization (bit): x 8 / x 16; Memory capacity (bit): 64M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: TSOP (48); Remarks: x 8 / x 16 switching type Original PDF
    R1WV6416RSA-5SI#B0 Renesas Electronics America Integrated Circuits (ICs) - Memory - IC SRAM 32MBIT 48TSOP Original PDF
    R1WV6416RSA-5SI#S0 Renesas Electronics America Integrated Circuits (ICs) - Memory - 64M ADV LPSRAM, STACKED, TSOP, P Original PDF
    R1WV6416RSA-5SR Renesas Technology 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) Original PDF
    R1WV6416RSA-7SI Renesas Technology Asynchronous SRAM; Organization (word): 8M / 4M; Organization (bit): x 8 / x 16; Memory capacity (bit): 64M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: TSOP (48); Remarks: x 8 / x 16 switching type Original PDF
    R1WV6416RSA-7SR Renesas Technology 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) Original PDF
    R1WV6416RSA-7SR#B0 Renesas Electronics America Integrated Circuits (ICs) - Memory - IC SRAM 64M PARALLEL 48TSOP Original PDF
    R1WV6416RSD-5SI Renesas Technology Asynchronous SRAM; Organization (word): 8M / 4M; Organization (bit): x 8 / x 16; Memory capacity (bit): 64M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: uTSOP (52); Remarks: x 8 / x 16 switching type Original PDF
    R1WV6416RSD-5SI#B0 Renesas Electronics America Integrated Circuits (ICs) - Memory - 64M ADV LPSRAM, STACKED, UTSOP, Original PDF
    R1WV6416RSD-5SI#S0 Renesas Electronics America Integrated Circuits (ICs) - Memory - 64M ADV LPSRAM, STACKED, UTSOP, Original PDF
    R1WV6416RSD-5SR Renesas Technology 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) Original PDF
    R1WV6416RSD-7SI Renesas Technology Asynchronous SRAM; Organization (word): 8M / 4M; Organization (bit): x 8 / x 16; Memory capacity (bit): 64M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: uTSOP (52); Remarks: x 8 / x 16 switching type Original PDF
    R1WV6416RSD-7SR Renesas Technology Asynchronous SRAM; Organization (word): 8M / 4M; Organization (bit): x 8 / x 16; Memory capacity (bit): 64M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: uTSOP (52); Remarks: x 8 / x 16 switching type Original PDF

    R1WV6416R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1WV6416R

    Abstract: 32MB SRAM 48P3R 52PTG 52-pin uTSOP 52-pin TSOP
    Text: Preliminary R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0001 Preliminary Rev.0.01 2008.03.24 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.


    Original     		R1WV6416R 16bit REJ03C0368-0001 64-Mbit 304-word 16-bit, 48-pin 32MB SRAM 48P3R 52PTG 52-pin uTSOP 52-pin TSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.


    Original     		R1WV6416R 16bit REJ03C0368-0100 64-Mbit 304-word 16-bit, 48-pin PDF

    uTSOP

    Abstract: 52-pin TSOP 48P3R 52PTG R1WV6416R 52-pin uTSOP
    Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.


    Original     		R1WV6416R 16bit REJ03C0368-0100 64-Mbit 304-word 16-bit, 48-pin uTSOP 52-pin TSOP 48P3R 52PTG 52-pin uTSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0100 Rev.1.00 2009.05.07 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.


    Original     		R1WV6416R 16bit REJ03C0368-0100 64-Mbit 304-word 16-bit, 48-pin PDF

    48-pin TSOP I

    Abstract: 52-pin TSOP TSOP 48 LAYOUT R1WV6416RSD-5SI R1LV6416R R1LV3216RSD-5SI R1LV3216RSD-5SR automotive thyristor R1LV3216RSA-5SI R1LV3216RSA-5SR
    Text: Renesas Technology to Release New Low-Power SRAM Products — 64 Mbit Series with Highest Capacity in the Industry and 32 Mbit Series with Compact Chip Size ⎯ Proven memory cell technology exclusive to Renesas Technology for increased capacity and high reliability such as free of soft errors ⎯


    Original     		R1WV6416R R1LV3216R 52-pin R1LV6416R 48-pin 48-ball 48-pin TSOP I 52-pin TSOP TSOP 48 LAYOUT R1WV6416RSD-5SI R1LV3216RSD-5SI R1LV3216RSD-5SR automotive thyristor R1LV3216RSA-5SI R1LV3216RSA-5SR PDF

    CY62148E

    Abstract: R1LP0108ESA-7SR
    Text: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.


    Original     		R1WV6416RSD-5SI R1WV6416RSD-7SI HM6216514LTTI-5SL R10PF0003ED0700 CY62148E R1LP0108ESA-7SR PDF

    RILP0108ESP-xSR

    Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
    Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


    Original     		R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D PDF

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI PDF

    r1lv0108

    Abstract: R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		R10PF0003ED0100 r1lv0108 R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR PDF

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 PDF

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI PDF

    48P3R

    Abstract: 52PTG R1WV6416R 52-pin uTSOP 52-pin TSOP R1WV6416RSA-7S
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF