X2816CI Search Results

X2816CI Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
X2816CI		Xicor	2K x 8 nMOS EEPROM Memory		Scan	PDF

X2816CI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c 3852 Abstract: DIN 3852-1 X2816C X2816CI Text: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C	Original	PDF	X2816C X2816C 120ns 150ns 200ns 24-Lead c 3852 DIN 3852-1 X2816CI
ae29F2008 Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764 Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.	Original	PDF	GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
TMS27256 Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32 Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64	Original	PDF	2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	PDF	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
x2816c-20 Abstract: DIN 3852 C3852 X2816C X2816CI x2816 Text: X2816C X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2816C	Original	PDF	X2816C X2816C --16Inc. x2816c-20 DIN 3852 C3852 X2816CI x2816
x2864 Abstract: X28C64C XICOR 28C256 x2816 Text: 4CLr 16K Commercial X28160 ociar v a Rît Industrial_ X2816CI_2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Tim e • High P erform ance Advanced NMOS Technology • Fast W rite Cycle Tim es — 16-Byte Page W rite Operation	OCR Scan	PDF	X28160 X2816CI_ 16-Byte x2864 X28C64C XICOR 28C256 x2816
DIN 3852 Abstract: DIN 3852-1 x2816 X2816C X2816CI X28C16 C3052 Text: IO G X2816C 16K H I! 2 0 4 8 x 8 Bit _ 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write	OCR Scan	PDF	X2816C 16-Byte X2816C DIN 3852 DIN 3852-1 x2816 X2816CI X28C16 C3052
DIN 3852-1 Abstract: C3852 X2816C X2816CI x2816 3852P Text: XICOR INC SEE D • *^41743 □□□3522 hT3 ■ XIC [¿ E B P X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM 7 ^ -/3 -^ 16K FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or V p p Control	OCR Scan	PDF	0aa35Â X2816C 16-Byte X2816C DIN 3852-1 C3852 X2816CI x2816 3852P
XXHX Abstract: x2816 X2816C military Text: im X2816C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write — No Complex Programming Algorithms	OCR Scan	PDF	X2816C XXHX x2816 X2816C military
2816 EEPROM Abstract: XLS2816A-250 CI EEPROM 2816 XLS2816A-300 XLS2816A-300 EXEL eeprom 2816 2816 X2816A xicor 2816 X2816A-25 Text: - 42 - 2 B 1 6 X A m it « £ OC -y f- y TAAC max ns) TCAC max (ns) TOH max (ns) TOE max (ns) n A T' f t t t TOD max (ns) VDD (V) I DD/STANDBY (iA) VIL max (V) v m rain (V) ft iy /m Ci max (pF) V O L / 1 VOL max (V/aA) £ « $ Co max (pF) MSM2816ARS-250	OCR Scan	PDF	MSM2816ARS-250 16ARS-300 MSM2816ARS-350 MSM2816ARS-400 XLS281GA-450 048x8) 24PIN DO205 Pin24 2816 EEPROM XLS2816A-250 CI EEPROM 2816 XLS2816A-300 XLS2816A-300 EXEL eeprom 2816 2816 X2816A xicor 2816 X2816A-25
Untitled Abstract: No abstract text available Text: J t ì f i f l T X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write	OCR Scan	PDF	X2816C 16-Byte
Untitled Abstract: No abstract text available Text: X2816C U H X2816C 16K 2 0 4 8 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page W rite — Single 5V S upply — No External High Voltages o r V p p Control C ircuits — Self-Timed — No Erase Before W rite	OCR Scan	PDF	X2816C X2816C 640ms
Untitled Abstract: No abstract text available Text: t 16K o Commercial X2816C X2816CI_ 2048 x 8 Bit Electrically Erasable PROM FEATURES • 200 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical	OCR Scan	PDF	X2816C X2816CI_ 16-Byte X2816C, X2816CI