YG805C04
Abstract: SCHOTTKY 20A 40V YG805C04R
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
YG805C04
SCHOTTKY 20A 40V
YG805C04R
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SCHOTTKY 20A 40V
Abstract: a465
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
SCHOTTKY 20A 40V
a465
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Untitled
Abstract: No abstract text available
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
Stora00
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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IR2116
Abstract: TLP521 8 D3SBA60 equivalent 120K100
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-1E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.
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DS04-27223-1E
MB3873
MB3873
F9906
IR2116
TLP521 8
D3SBA60 equivalent
120K100
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IR2116
Abstract: tlp521 equivalent YG805C04 D3SBA60 ECQU2A224MV FPT-16P-M06 HA17431P MB3873 TLP521-1 2SC3233
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-1E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.
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DS04-27223-1E
MB3873
MB3873
IR2116
tlp521 equivalent
YG805C04
D3SBA60
ECQU2A224MV
FPT-16P-M06
HA17431P
TLP521-1
2SC3233
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D3SBA60 equivalent
Abstract: IR2116 D3SBA60 tlp521 equivalent 2SC3233 YG805C04 2SK2543 ECQU2A224MV FPT-16P-M06 HA17431P
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-2E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.
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DS04-27223-2E
MB3873
MB3873
F0308
D3SBA60 equivalent
IR2116
D3SBA60
tlp521 equivalent
2SC3233
YG805C04
2SK2543
ECQU2A224MV
FPT-16P-M06
HA17431P
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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TL130
Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
CB803-03
TL130
tc122 25 8 4
yg802c10
SD883-04
SD833-04
LM3661TL-1.40
TC8520
tc9145
TS802C09
ERA82-004
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yg802c10
Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度
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O220AB
O220F
TS805C04
TS805C06
TP805C04
ESAC83-004
ESAC83M-004R
ESAC83M-006R
YG805C04R
YG805C06R
yg802c10
LM3661TL-1.40
YG803C04
YG803C06
TL1115
tc-118 sd
TL130
YG805C10
YG835C04
YG811S04
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UTI03
Abstract: P151 T460 YG805C04 IlI15
Text: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications
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YG805C04
SC-67
500ns,
l95t/R89
UTI03
P151
T460
IlI15
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diode F4 3J
Abstract: No abstract text available
Text: YG805C04 2 oa X 3 7 h + — ' < x) T ¥ * O u tlin e D ra w in g s K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f WE • T A v + 's V T M - C o n n e ctio n D iagram Super high speed switching. • -f u - i —
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YG805C04
500ns,
diode F4 3J
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YG805C04
Abstract: 18Oi
Text: YG805C04 20A H Outline Drawing scHOTTKY b a r r i e r d io d e • Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching r > h H « -| • High reliability by planer design !> i) ■ Applications
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YG805C04
500ns,
YG805C04
18Oi
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A485
Abstract: No abstract text available
Text: YG8O5CO4 20 a *>3'y h + —/< X Ì 7 ¥ ^ —K • Outline Drawings SCHOTTKY BARRIER DIODE ■Ml Features Insulated package by fully m o ld in g . • te V F Low V f ¡TOE • X 'fy T 's if'Z t- Connection Diagram Super high speed sw itchin g. • T V -* -ftfffC J S A f ilit t
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YG805C04
YG805C04I20A)
A485
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ESAB82-004
Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)
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KS823C04
KP823C04
TP801C04
TP801C06
ESAB82-004
ESAB82M-004
ESAB82M-006
O-220
O-22QAB
O-22QF17
ESAB85-009
YG801C04
YG801C06
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yg805c
Abstract: No abstract text available
Text: This ma «rial and the information herein ts the property of Fuji Elecinc Co.Ltd. They shall be neither reproduced, copiée leni, or disclosed in any way w hatsoever for the use of a ny third pany.nor used for the manufacturing purposes w ithout the express writ ion consent of Fuji Electric Co. Ltd.
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YG805C04R
H04-004-07
YG805C04R
yg805c
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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Untitled
Abstract: No abstract text available
Text: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04
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1c-79
c-85C
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,
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ERA82-004
ERA83-004
ERA81-004
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
ERC62-004
ERC80M-004
ERC62M-004
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d04 diode Marking s4
Abstract: YG805C04R jill20
Text: This material and the information herein t$ the property of Fuji Electric Co.Ltd. They shall be neither «produced, copiée lem. or disclosed in any way whatsoever lor the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.
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YG805C04R
HQ4-004-07
d04 diode Marking s4
YG805C04R
jill20
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