TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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BF189
Abstract: NT2222 BSY21 TP3300 BF234 bf310 JE9101A 2sc2787l PE254 PE254C
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO , 5 10 15 20 25 30 35 40 45 50 55 60 70 75 80 85 90 fr (V) (Hz) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 3U 30 30 30 30 30 30 30 30 30 ~~~;~P ~eelnoex BC413P BC413C BC413CP GES2221
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TMPT2222
PN3643
TP2219
TP2222
TP3300
TP3302
TP3643
TP5369
2N3643
2N4437
BF189
NT2222
BSY21
BF234
bf310
JE9101A
2sc2787l
PE254
PE254C
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02BZ2
1S2092
1SZ5759
02CZ2
1S2094
2N3055
02CZ5
1S2095A
2N3713
02Z24A1M
mg75n2ys40
MG15N6ES42
2SK150A
2sk270a
MG150n2ys40
MG8N6ES42
MG15G1AL2
mg75j2ys40
MG30G1BL2
S2530A
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Untitled
Abstract: No abstract text available
Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125
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YTS2222
-50QmA
500mA,
YTS2907
VCE-10V,
Ic-10mA
150mA
500mA
Ic-150tnA
150mA,
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YTS2222
Abstract: No abstract text available
Text: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage
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YTS2222
500mA
500mA,
YTS2907
YTS2222
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YTS2222A
Abstract: No abstract text available
Text: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA
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YTS2222A
500mA
500mA,
300MHz
YTS2907A
100pA.
150mA,
100fvs
YTS2222A
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YTS2222
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA
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YTS2222
500mA
S-Q15.
500raA,
YTS2907
Ta-25
150mA
Ic-500mA
Ic-150mA
150mA,
YTS2222
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION
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0G17T12
YTS2222A
500mA
500raA,
300MHz
YTS2907A.
lE-20mA
Ic-100Â
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YTS2222A
Abstract: YTS2222 YTS2221
Text: SILICON NPN EPITAXIAL TYPE YTS2222A FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION. MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATIONS. • • • • DC Current Gain Specified : 0.1~500mA Low Collector-Emitter Saturation Voltage : V cE sat = 1.0V(Max.) @Iq = 500mA, Ig = 50mA
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YTS2222A
500mA
500mA,
YTS2221A
250MHz
300MHz
YTS2906A,
YTS2907A.
YTS2222A
YTS2222
YTS2221
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YTS2221
Abstract: YTS2222
Text: YTS2222 SILICON NPN EPITAXIAL TYPE Unit in mm FOR GENERAL PURPOSE USE + 0.5 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • DC Current Gain Specified : O.l^SOOmA • Low Collector-Emitter Saturation Voltage : VCE sat =1.6V(Max.)
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YTS2222
500mA,
YTS2906
YTS2907
SC-59
150mA
150mA
500mA
YTS2221
YTS2222
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YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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ICA10
Abstract: YTS2907A 150fps
Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency
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YTS2907A
-500mA
fT-200MHz
YTS2222A
-500mA,
-50mA
Ta-25
-15mA
500mA,
-50mA
ICA10
YTS2907A
150fps
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transistor E 13009
Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4I26
2N4400
2N4401
transistor E 13009
transistor d 13009
E 13009
13007 m
13007 2 transistor
13009 PNP Transistor
jE 13007
transistor E 13007
p 13009
transistor j 13009
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YTS2906A
Abstract: YTS2221 150PPS
Text: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA
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YTS2907A
--500mA
--500mA,
--50mA
200MHz
YTS2221A,
YTS2222A.
O-236MOD
SC-59
YTS2906A
YTS2221
150PPS
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transistor marking MK
Abstract: YTS2222
Text: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)
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YTS2907
-500mA
200MHz
YTS2222
-500mA,
-50mA
Ta-258C)
-10/iA,
-10mA,
10/iA,
transistor marking MK
YTS2222
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2n3904 2n3906
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64
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2N3904
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
2N4403
2N5400
2n3904 2n3906
2SC1815 2SA1015
2SC1815
2SA1015
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2n 3904 411
Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13
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1SV237
1SV239.
1SV257
TA4100F.
YTS2222.
YTS2222A.
YTS2907.
YTS2907A.
YTS3904.
YTS3906.
2n 3904 411
2SB 407
2SK176
Toshiba 2SC3281
K 1113
2sk toshiba
TA4100F
TOSHIBA 2N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND
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YTS2907A
500mA
500mA,
-50mA
YTS2222A
150PFS
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YTS2906
Abstract: YTS2222 YTS2221
Text: SILICON PNP EPITAXIAL TYPE YTS2907 Unit in mm FOR GENERAL PURPOSE USE + 0.5 MEDIUM SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • High DC Current Gain Specified : -0.1 ^-500mA • High Transition Frequency : fT=200KHz Min. @ Ic=-50mA
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YTS2907
-500mA
200KHz
-50mA
-500mA,
YTS2221
YTS2222
SC-59
-10pA,
YTS2906
YTS2222
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60
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YTS3903
YTS3905
YTS3904
YTS3906
YTS4123
YTS2222
YTS2907
YTS2221A
YTS2906A
YTS2222A
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YTS2222
Abstract: No abstract text available
Text: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.
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YTS2907
-500mA
-50mA,
200MHz
-500mA,
-50mA
YTS2222
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TRANSISTOR MARKING YB 1L
Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738
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2SC4841
OT89/SC62)
TRANSISTOR MARKING YB 1L
2SK 2SA 2SC equivalent
ON 4497 HF transistor
1B01F
transistor 2sc 1586
i203 transistor
transistor 2sk power amp
transistor bc 2sk
transistor 2sk 70
TBC846
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TIPI27
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0
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OT-23MOD
2N3903
YTS3903
2N3904
YTS3904
2N3905
YTS3905
2N3906
YTS3906
2N4123
TIPI27
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