FXT757

Abstract: ZTX757 DSA003758
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

ZTX757

Abstract: T092 ZTX756
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 IS S U E 2 - J U L Y 94 FEATURES * 300 Volt V CE0 * 0.5 A m p continuous current * Ptot= 1 Watt E-Line T 092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L ZTX756 ZTX757

Contextual Info: ZTX756 Not Recommended for New Design Please Use ZTX757 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr ts tf µs µs

Contextual Info: Not Recommended for New Design Please Use ZTX757 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 - FEB 94_ FEATURES * 300 V o lt V CE0 * 0.5 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt E-Line T092 Compatible REFER TO ZTX757 FOR GRAPHS

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 - FEB 94_ FEATURES * 300 Volt V,CEO 0.5 Amp continuous current P,o,= 1 Watt E-Line T092 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZTX757M1 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300è V(BR)CBO (V)300 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX756

Abstract: ZTX757 DSA003775
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr ts tf µs µs 250 IB1=IB2=IC/10 VCE=10V 1.6 IC/IB=10 1.4 200 3 Switching time

ZTX757

Abstract: ZTX756
Contextual Info: PNP SILICON PLANAR M EDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 -J U L Y 94 FEATURES * 30 0 Volt V CE0 * 0.5 A m p c o n tin u o u s current * P,0.= 1 W a t t E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Z TX756

Contextual Info: ZTX757 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300è V(BR)CBO (V)300 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Not Recommended for New Design Please Use ZTX757 MPSA92 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio VCE=10V 50 40 0.1 10 1.0 APPLICATIONS * Telephone dialler circuits 170 150 110 ABSOLUTE MAXIMUM RATINGS. 70 50 30 0.1 IC-Collector Current (mA)

Contextual Info: DISCONTINUED PLEASE USE ZTX757 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

ZTX757

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX756 ZTX757 UNIT Collector-Base Voltage

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

pnp 500v

Contextual Info: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

ZTX458

Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN

ztx756

Abstract: SE179
Contextual Info: PNP Silicon Planar Medium Power High Voltage Transistors ZTX 756 ZTX 757 FEATURES • • • • • 1W p o w e r d issip a tio n a t T >mb = 2 5 ° C E xce lle n t gain c h a ra c te ristic s at lc = 1 0 0 m A V o lta g e s up to 3 0 0 V L o w sa tu ra tion v o lta g e s

ZTX756

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 -J U L Y 94 FEATURES * 300 Volt V,CEO 0.5 Am p continuous current P,0,= 1 W att E-Une T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

Contextual Info: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps