FXT655
Abstract: ZTX655
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FXT655
ZTX655
500mA,
200mA*
20MHz
FXT655
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ZTX654
Abstract: ZTX655 DSA003771
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10
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ZTX654
ZTX655
500mA,
200mA*
20MHz
ZTX654
ZTX655
DSA003771
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ZTX654
Abstract: No abstract text available
Text: ZTX654 Not Recommended for New Design Please Use ZTX655 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain %
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ZTX654
ZTX655
ZTX655
IC/10
100ms
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER
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Original
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FXT655
ZTX655
500mA,
200mA*
20MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: ZTX655M1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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ZTX655M1
Freq30M
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PDF
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Untitled
Abstract: No abstract text available
Text: ZTX655 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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ZTX655
Freq30M
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TIP290
Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001
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O-220var
OT-186
O-220
O-220AB
TIP290
2N4001 diode
MJ029C
2SC1624Y
TIP-290
2N2202
BDY66
2SC16250
2N2204
TO-202AC
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MPSA42
Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Text: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100
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ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
ZTX342
ZTX341
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 - J U L Y 94 FEATURES * A 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att hA J / m be E-Line T 09 2 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX654
ZTX655
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 / ISSUE 2 - J U L Y 94 FEATURES * 150 V o lt V CEQ * 1 A m p c o n tin u o u s c u rre n t * L o w s a tu ra tio n v o lta g e * Ptot= 1 W a tt E -Line T 0 9 2 Com patible ABSOLUTE MAXIMUM RATINGS.
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ZTX654
ZTX655
ZTX655
500mA,
20MHz
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Se136
Abstract: Se133 SE135 ZTX654 se134
Text: NPN Silicon Planar Medium Power High Voltage Transistors ZTX 654 ZTX655 FEATURES • • • • • • 1.5 W power dissipation at Tamb = 2 5 ° C * 1A continuous lc Guaranteed hFE specified up to 1A Voltages up to 15 0 V Low saturation voltages Complementary types
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ZTX655
SE134
ZTX654
SE135
SE136
SE137
Se136
Se133
SE135
se134
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR _ ISSUE 1 - FEB 94 FEATURES * 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W a t t REFER TO ZTX655 FOR G R A P H S ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L
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ZTX655
001G35S
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PDF
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200
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ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
ZTX342
ZTX341
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Untitled
Abstract: No abstract text available
Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc
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70S7fl
000bfl7fl
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
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ZTX458
Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN
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OCR Scan
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA425
MPSA92
BF393
BF493
ZTX558
ZTX758
BF493
ZTX4555
BF392
MPSA92
ZTX757
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ZVN2106AM
Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Text: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements
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VNL120AM
7220S33
ZVN2106AM
ZVP2106AM1
ZTX753M1
ZTX751M1
ZVP0535AM1
ZTX449
42-06A
ZTX653M
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Untitled
Abstract: No abstract text available
Text: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps
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OCR Scan
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7E50533
000SD7M
ZTX657
MPSA42
BF393
BF392
ZTX656
MPSA43
BF391
ZTX655
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MPSA42
Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Text: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100
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00Q7DS1
ZTX657
MPSA42
ZTX656
MPSA43
ZTX655
ZTX455
ZTX454
ZTX654
ZTX757
ZTX342
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PDF
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ZTX458
Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO
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OCR Scan
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA425
MPSA92
BF393
BF493
BF493
BF392
MPSA92
ZTX558
ZTX757
ZTX758
2N5401 BF391
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BF493
Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.
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1000mW
ZTX4555
ZTX555
ZTX454
ZTX554
ZTX453S
ZTX553
ZTX452
ZTX552
MPSA06
BF493
ZTX338
ZTX451
ZTX551
ZTX552
ZTX553
ZTX554
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2TX650
Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Text: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.
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OCR Scan
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ZTX658
ZTX758
ZTX458
ZTX558
ZTX6575
ZTX757
MPSA42S
MPSA92
BF393
BF493
2TX650
zetex transistors TO92
BF493
ZTX558
ZTX758
BF392
MPSA92
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ZT Ferranti
Abstract: BF4935P SE-169 TX-550 X752 X449
Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current
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TQ-92
ZTX752
ZTX751
ZTX749
SO-96
107il/D
SE172
ZT Ferranti
BF4935P
SE-169
TX-550
X752
X449
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PDF
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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PDF
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ztx1056a
Abstract: No abstract text available
Text: Section 2: Bipolar Transistors _ High Voltage T ransistors I 0 0 to BO O V o its E-Line NPIM High V o ltage {Vceo up to 400V T ra n s is to rs Pinout Details: 1-Collector, 2-Base, 3-Emitter V CBO V CEO hFE lc Type VcE sat)
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OCR Scan
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ZTX658
ZTX458
2N6517
ZTX857
BF393
MPSA42
ZTX657
ZTX457
ZTX855
ZTX656
ztx1056a
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