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    A 1046 TRANSISTOR Search Results

    A 1046 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 1046 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB919

    Abstract: 2SD123
    Text: Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]


    Original     		PDF 1046B 2SB919/2SD1235 2010C 2SB919/2SD1235] O-220AB SC-46 2SB919 2SB919 2SD123

    2SB919

    Abstract: 2SD1235 2SD123
    Text: Ordering number:ENN1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]


    Original     		PDF ENN1046B 2SB919/2SD1235 2010C 2SB919/2SD1235] O-220AB 2SB919 2SB919 2SD1235 2SD123

    Maxim date code DS2431

    Abstract: 1046 cmos esd sensitivity JESD22-A114
    Text: 8/26/2011 PRODUCT RELIABILITY REPORT FOR DS2431, Rev C2 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF DS2431, maxim77 WJ945484A WJ046370D DSQ3301-K04+ WW156001E DS2431 ZJ163079AC DS24B33 Maxim date code DS2431 1046 cmos esd sensitivity JESD22-A114

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: ShE ]> SILICON TRANSISTOR CORP • B254022 □□00fl‘i2 20b « S T C SILICON TRANSISTOR CORPORATION ^ ^ Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.5 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF B254022 SNF20505 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR CORP Ô254GE2 G Q G O ' m SbE D TbT « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 200 VOLTS 0.11 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ202


    OCR Scan     		PDF 254GE2 STQ202 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    Silicon Transistor Corp

    Abstract: 2950 transistor
    Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2S4022 SNF40503 BreM0-078 ST102 MIL-S-19500 Silicon Transistor Corp 2950 transistor

    406j transistor

    Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and


    OCR Scan     		PDF 14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846

    ST102

    Abstract: LS38 Y-H8 846 transistor
    Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402


    OCR Scan     		PDF STQ402 ST102 MIL-S-19500 ST102 LS38 Y-H8 846 transistor

    LS29

    Abstract: TRANSISTOR mosfet
    Text: SILICON TRANSISTOR CORP Ô2S4G25 St.E D DGDG'ì'ìb Ô3 2 « S T C \ 'Z ° \ 'Z n SILICON TRANSISTOh CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 100 VOLTS 075 OHMS QUAD N CHANNEL POWER MOSFET


    OCR Scan     		PDF 2S4G25 STQ102 ST102 MIL-S-19500 LS29 TRANSISTOR mosfet

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR CORP fl2S4D22 □□□□‘ìflb <^3 « S T C 5bE D T -3 W S SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.9 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF fl2S4D22 SNF40409 O-258 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    SILICON TRANSISTOR CORP

    Abstract: h a 431 transistor
    Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF SNF40404 ST102 MIL-S-19500 SILICON TRANSISTOR CORP h a 431 transistor

    ST102

    Abstract: No abstract text available
    Text: S I L I CO N T R A N S I S T O R CORP A 2 5 4 G 2 2 OOODTfiG 475 * S T C SbE D SILICON “P S * A S TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.3 Ohms TECHNICAL DATA SHEET


    OCR Scan     		PDF F40403 M0-078 ST102 MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: S I LI CO N T R A N S I S T O R CORP fl2S4D22 OOOOfififi BBS « S T C SbE D SILICON TRANSISTOR CORPORATION I '3 ° M 2 > Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET


    OCR Scan     		PDF fl2S4D22 SNF20404 ST102 MIL-S-19500

    406J

    Abstract: 10-32 UNF 2 A
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERH O USE BipslarPow er Transistors ' C E (S A T ) hpE Package TO -5/TO -39 ia 1r Notes: Part Number 2N3867, S (1) 2N3868, S (1) Bvceo Ic ( v o lt s ) ( am D S )


    OCR Scan     		PDF 2N3867, 2N3868, 14-PtN 406J 10-32 UNF 2 A

    406J

    Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 IRFC130 IRFC230 IRFC330 IRFC430 406J JD 1801 IRFC9230 IRFC110 2N6847 irfc250

    Untitled

    Abstract: No abstract text available
    Text: 5bE D SIL I CO N T R A N S I S T O R CORP Ô S 5 4 0 2 2 O O G O ñ T G 433 ISTC SILICON " T 1 TRANSISTOR CORPORATION ~0> Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.3 Ohms TECHNICAL DATA SHEET


    OCR Scan     		PDF SNF20403 ST102 MIL-S-19500

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SIL I CO N T R A N S I S T O R CORP SbE D • Ô E 5 4 D 2 2 G G 0 0 T Ì 2 1^7 « S T C SILICON T ' ^ -Z 7 TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 300 0.3 QUAD N CHANNEL POWER MOSFET


    OCR Scan     		PDF STQ302 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    BGY90A

    Abstract: SOT197
    Text: DEVELOPMENT DATA N AflER PH ILIPS/D ISCRETE DbE D This data *h*at eortttJmi « to n e « Informitton and " 11 • BGY90A specifications art tubject to change without notice, I I ; 86D 0 1046 D T - 7 </- a tf~~ o/ U.H.F. POWER MODULE The BGY90A is a two stage u.h.f. power module designed for use in mobile transmitting equipment


    OCR Scan     		PDF bb53131 BGY90A 7Z80B39 800MHz 890MHz SOT197

    Untitled

    Abstract: No abstract text available
    Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024


    OCR Scan     		PDF 2N6058 2N6059 2N6350 2N6351 14-PtN

    2SB919

    Abstract: jo16 2SD123
    Text: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.


    OCR Scan     		PDF EN1046B l046B 2SB919/2SD1235 2SB919 2SB919 jo16 2SD123

    TXAL 226 B

    Abstract: RCV144ACFW/SP r6749 RCV144ACFW RCV144 TXAL 226 "MNP 1OEC" 3BL DBM sds relay RCV336ACF/SP
    Text: 4L* R o c k w e l l Sem iconductor Systems RCV336ACF/SP and RCV144ACF/SP Modem Device Designer's Guide Preliminary Order No. 1046 Rev. 3, August 2.1996 RCV336ACF/SP and RCV144ACF/SP Modem Designer’s Guide 1. INTRODUCTION 1.1 SUMMARY The Rockwell RCV336ACF/SP and RCV144ACF/SP Modem Device Families support high speed data, high speed fax,


    OCR Scan     		PDF RCV336ACF/SP RCV144ACF/SP TXAL 226 B RCV144ACFW/SP r6749 RCV144ACFW RCV144 TXAL 226 "MNP 1OEC" 3BL DBM sds relay

    5110 draft sensing pin

    Abstract: Rockwell fax modem smd diode lww accelerator rockwell modem rcv144 SPEAKERPHONE transistor smd rjm ce SMD CODE LWW
    Text: ^ R o c k w e ll Semiconductor Systems RCV336ACF/SP and RCV144ACF/SP Modem Device Designer's Guide Preliminary Order No. 1046 Rev. 3, August 2,1996 7Û11D73 0 0 2 ^ 1 fllT RCV336ACF/SP and RCV144ACF/SP Modem Designer’s Guide Table of Contents 1. INTRODUCTION. 1-1


    OCR Scan     		PDF RCV336ACF/SP RCV144ACF/SP 11D73 ML144 5110 draft sensing pin Rockwell fax modem smd diode lww accelerator rockwell modem rcv144 SPEAKERPHONE transistor smd rjm ce SMD CODE LWW

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II


    OCR Scan     		PDF 10ki2) Q62702-C2382 OT-23 Thermal01 fi53SbQS

    BU326s

    Abstract: No abstract text available
    Text: S G S - T H O M S ON D7E » I J 1 2 i 2 3 7 Ü Q 1 7 Q 7 B ^ 1^ 67C 1^9 7 5 D 33 ^ J-Ì BU326S MULTIEPITAXIAL MESA NPN HIGH VO LTAGE POW ER SW ITCH The BU 3 2 6 S is a silicon multiepitaxiai N P N transistor in Jedec TO-3 metal case, par­ ticularly intended for sw itch-m ode C T V applications.


    OCR Scan     		PDF BU326S DG17G7S 001707b BU326s