BLM18HD182SN1D
Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
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BGA3012
BGA3012
BLM18HD182SN1D
RC0402FR-07300RL
YAGEO RC0402FR
NXP MARKING 11* 3PIN
marking code 6w
LQG15HS3N9S02D
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CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
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Untitled
Abstract: No abstract text available
Text: 43 dB Gain, 1 Watt, 12 GHz to 18 GHz, Broadband High Gain Amplifier, 39 dBm IP3, 6 dB NF, SMA TECHNICAL DATA SHEET PE15A3507 PE15A3507 is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db and high 43 dB typical small signal gain with the gain flatness of ±1.5dB max and an outstanding output
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PE15A3507
PE15A3507
-high-gain-amplifier-6-db-sma-pe15a3507-p
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Untitled
Abstract: No abstract text available
Text: 41 dB Gain, 1 Watt, 8 GHz to 12 GHz, Medium Power High Gain Amplifier, 3.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4008 PE15A4008 is a 1 W X-band high gain coaxial power amplifier in the 8 to 12 GHz frequency range. The amplifier offers 30 dBm of P1db min and 41 dB (min) small signal gain with the excellent gain flatness of ±1.0 dB. This performance is achieved
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PE15A4008
PE15A4008
power-high-gain-amplifier-sma-pe15a4008-p
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : @ 900 MHz, +6.5 to +38 dB @ 1900 MHz, +1 to +32.5 dB @ 2600 MHz, -4 to +27.5 dB
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HMC926LP5E
HMC926LP5E
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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LNA at 15 GHZ with Ultra high sensitivity
Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers
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HMC313
LNA at 15 GHZ with Ultra high sensitivity
MSOP-10
bluetooth transceiver
hmc-28
2.4 ghz transmitter radio controlled with seven
HBT MMIC Amplifier sot-86
HMC308
HMC310MS8G
HMC315
HMC318MS8G
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HMC926LP5E
Abstract: H926
Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : • Cellular Infrastructure • WiBro, WiMAX and LTE/4G • Microwave Radio & VSAT
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HMC926LP5E
HMC926LP5E
H926
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H625
Abstract: HMC625LP5 HMC625LP5E
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
H625
HMC625LP5E
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Untitled
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC743LP6C
743LP6CE
HMC743LP6
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HMC743LP6C
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC743LP6C
743LP6CE
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HMC743
Abstract: ACG12 h743 HMC743LP6
Text: HMC743LP6C / 743LP6CE v03.0810 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC743LP6C
743LP6CE
36mm2
HMC743
ACG12
h743
HMC743LP6
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v02.0709 0.5 dB LSB GaAs MMIC 12-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC743LP6C
743LP6CE
12-BIT
36mm2
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Untitled
Abstract: No abstract text available
Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC627LP5
627LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC627LP5
627LP5E
25mm2
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HMC627LP5E
Abstract: HMC627LP5
Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC627LP5
627LP5E
25mm2
HMC627LP5E
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Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
S71318-00-000
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SST13LP05
Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
80Taipei
S71318-00-000
SST13LP05
SST13LP05-MLCF
SST13LP05-MLCF-K
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Untitled
Abstract: No abstract text available
Text: SBBA-180-43-01-SMA DATA SHEET 12 GHz to 18 GHz, 43 dB Gain Broadband High Gain Amplifier with 1 Watt and SMA SBBA-180-43-01-SMA is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db
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SBBA-180-43-01-SMA
SBBA-180-43-01-SMA
-high-gain-amplifier-sbba-180-43-01-sma-p
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tt 18934
Abstract: 30i sot23 5140 SN 74500
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z
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IS21El2
IS21EI2
NE686
NE68618-T1
NE68619-T1
NE68630-T1
NE68633-T1
tt 18934
30i sot23
5140
SN 74500
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING
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NE76038
NE76038
reliab121
NE76038-T1
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LTA 703 S
Abstract: EM 408 gps beta e 555
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:
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NE721S01
NE721S01
24-Hour
LTA 703 S
EM 408 gps
beta e 555
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