A02 TRANSISTOR RF Search Results

A02 TRANSISTOR RF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A02 TRANSISTOR RF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
a02 Transistor rf Abstract: RF transistors with s-parameters stripline power combiner splitter transistor RF S-parameters Hall Siemens high power transistor s-parameters HPIB CONTROLLER RF Transistor s-parameter TRANSISTOR noise figure measurements application Transistor SP-30 Text: Application Note No. 008 Discrete & RF Semiconductors G. Lohninger L. Musiol Measure 3 Types of Parameter and You’ll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation With the increasing need to reduce development time, RF Designers are	Original		PDF
a02 Transistor rf Abstract: siemens capacitors siemens oscillator transistor transistor oscillator circuit AG TRANSISTOR Text: Application Note No. 023 Discrete & RF Semiconductors Designing Oscillators with low 1/f-noise A key parameter of oscillators is the purity of the signal they produce. Whilst harmonics can be filtered out by a simple lowpass-filter, the spurious levels close the wanted signal can only	Original		PDF
a02 Transistor rf Abstract: resistor 56E TR400 BCR400 BCR400R BCR400W all ic in one file TR-400 Text: Application Note No. 014 High Frequency Products Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W RF transistor controlled by BCR400 Operating point • BCR400 stabilizes the operating CURRENT i.e. IC or ID , the collector ( or drain ) voltage	Original	BCR400R BCR400W BCR400 BCR400 BCR400) a02 Transistor rf resistor 56E TR400 BCR400W all ic in one file TR-400	PDF
RT9644 Abstract: QFN-6x6 package Text: RT9644/A ACPI Regulator/Controller for Dual Channel DDR Memory Systems General Description Features The RT9644/A is a complete ACPI compliant power solution for DDR and DDR2 memory system with up to 4 DIMMs dual channel systems. This RT9644 includes one synchronous buck controller for DDR/DDR2 VDDQ, one	Original	RT9644/A RT9644/A RT9644 RT9644A DS9644/A-02 QFN-6x6 package	PDF
Untitled Abstract: No abstract text available Text: HPH-12/30-D48 Series www.murata-ps.com Isolated, 12 VOUT, 30A, Half-Brick DC/DC Converters PRODUCT OVERVIEW For applications requiring improved electrical and thermal performance, consider Murata’s new HPH series “Half Brick” DC/DC power converters. These	Original	HPH-12/30-D48 12Vdc 30Amps 36-75Vdc.	PDF
Telcordia SR-332 GB Abstract: No abstract text available Text: OKX T/10 & T/16-D12 Series www.murata-ps.com Adjustable DOSA 10/16-Amp SIP DC/DC Converters PRODUCT OVERVIEW The OKX-T/10 and -T/16 series are miniature SIP non-isolated Point-of-Load POL switch mode DC/DC power converters for embedded applications. The	Original	T/16-D12 10/16-Amp OKX-T/10 -T/16 T10T16 Telcordia SR-332 GB	PDF
Untitled Abstract: No abstract text available Text: Switch Mode Power Supply S8VS 60/90/120/180/240/480-W Models 60/90/120/180/240/480-W Models Models with Indication Monitor and Simple Functions for Easy System Commissioning • 60-W and 90-W models with indication monitor that conform to UL Class 2 Output standards.	Original	60/90/120/180/240/480-W F47-0706 200-VAC T026-E1-08	PDF
ITE8502E-L Abstract: ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251 Text: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.	Original	BAP41/BAP51/BAP52/BXP41/SJM52 BAP41/BAP51 D-CS-1310A2292001-ALG R1001 -1/16W-0402 R1002 -1/16W-0402 CN1001 CLK32 6012B0243402 ITE8502E-L ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251	PDF
via VT8237A Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan	Original	K8N890 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 6019B0252801 via VT8237A bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd	PDF
IT8512E-L Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan	Original	K8N890 U1002 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 IT8512E-L ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 PZ6382A-284S-41F transistor C547 npn	PDF
sil1364 Abstract: Sil1364A Inventec PZ4782K fds8884 foxconn IT8305E IT8512F ITE8512F 3702-F03C-02R Text: 5 4 3 2 1 D D Inventec Corporation R&D Division Board name : Mother Board Schematic C Project : M11D Santa Rosa Version : A02 C Initial Date : July 30 , 2007 Approval By : Eric Yang Check By : Ben Lee B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree	Original	CN1201 87213-0200G 6012B0069901 FIX1201 FIX1202 FIX1203 FIX1204 FIX1205 FIX1206 FIX1207 sil1364 Sil1364A Inventec PZ4782K fds8884 foxconn IT8305E IT8512F ITE8512F 3702-F03C-02R	PDF
Sis 968 Abstract: m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106 Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C CONFIDENTIAL B B Board name : Mother Board Schematic A A Project : xxxx FSC_v5535 Version : 01 Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan	Original	v5535) S1002 C1002 SW1001 6026B0057602 1BT002-0121L SW1002 C1003 Sis 968 m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106	PDF
2n2 j100 Abstract: u107 TRANSISTOR c104 AD607 AD712 AD812 AD9066 AD9066AR AD9066JR ADSP-21062 Text: a FEATURES Two Matched ADCs on Single Chip CMOS Compatible I/O Low Power 400 mW Dissipation Single +5 V Supply On-Chip Voltage Reference Self-Biased for AC Coupled Inputs 28-Pin SOIC Package APPLICATIONS Direct Broadcast Satellite (DBS) Receivers QAM Demodulators	Original	28-Pin AD9066 AD9066 C2019 28-Lead 2n2 j100 u107 TRANSISTOR c104 AD607 AD712 AD812 AD9066AR AD9066JR ADSP-21062	PDF
2n2 j100 Abstract: 2N2866 AD607 BR107 U108 Text: BACK a FEATURES Two Matched ADCs on Single Chip CMOS Compatible I/O Low Power 400 mW Dissipation Single +5 V Supply On-Chip Voltage Reference Self-Biased for AC Coupled Inputs 28-Pin SOIC Package APPLICATIONS Direct Broadcast Satellite (DBS) Receivers QAM Demodulators	Original	28-Pin AD9066 AD9066 28-Lead C2019 2n2 j100 2N2866 AD607 BR107 U108	PDF

transistor bf 198 Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3 Text: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package	OCR Scan	23SLDS 0DQ444fcÂ BF198 Q62702-F354 qqq4450 transistor bf 198 BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3	PDF
Untitled Abstract: No abstract text available Text: S IE M E N S Si-MMIC-Amplifier BGA427 in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain \|s21\|2=18.5 dB at 1.8 GHz appl.1 Gain \|s21f =22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V d=3V, lD=9.4mA)	OCR Scan	BGA427 25-Technology OT343 Q62702-G0067	PDF
a02 Transistor rf Abstract: transistor bf 198 Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package	OCR Scan	a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198	PDF
bms 97 Abstract: 37265 Text: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain \|s21f =18.5 dB at 1.8 G H z appl.1 Gain \|s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)	OCR Scan	BGA427 25-Technology Q62702-G0067 CP5056G5 bms 97 37265	PDF
.0549 Abstract: marking A02 a02 Transistor rf mje 1827 transistor 139 BF BGA427 GPS05605 Q62702-G0067 transistor NF j1 marking code marking code 8Ff Text: SIEM ENS BG A427 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain \|s21\|2=18.5 dB at 1.8 GHz appl.1 Gain \|s21f= 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz	OCR Scan	BGA427 25-Technology OT343 BGA427 Q62702-G0067 .0549 marking A02 a02 Transistor rf mje 1827 transistor 139 BF GPS05605 transistor NF j1 marking code marking code 8Ff	PDF
DIN125A Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472 Text: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:	OCR Scan	T-33-17 DIN41869 DIN125A BF472S T0126 15A3DIN transistor bc 470 BF470S din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON ra o » » !! » » © ! A M 83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED • RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY	OCR Scan	AM83135-050	PDF
GaAs FET HEMT Chips Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)	OCR Scan	MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor	PDF
fet transistor a03 Abstract: MGFC4419 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain	OCR Scan	MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419	PDF
DF378F Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E Text: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum	OCR Scan	PCF35N08 source-10-mil Number-09288 PCF35N08- RFK35N08 RFK35N10 NR231A DF103B DF378F NRJ31A DF378F df103b FT03E I36S PCF35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E	PDF

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A02 TRANSISTOR RF Search Results

A02 TRANSISTOR RF Result Highlights (5)

A02 TRANSISTOR RF Datasheets Context Search

a02 Transistor rf

a02 Transistor rf

a02 Transistor rf

RT9644

Untitled

Telcordia SR-332 GB

Untitled

ITE8502E-L

via VT8237A

IT8512E-L

sil1364

Sis 968

2n2 j100

2n2 j100

transistor bf 198

Untitled

a02 Transistor rf

bms 97

.0549

DIN125A

Untitled

GaAs FET HEMT Chips

fet transistor a03

DF378F