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    MGFC4419G Price and Stock

    Mitsubishi Electric MGFC4419G-A03

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGFC4419G-A03 94,250
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    Mitsubishi Electric MGFC4419G-A13

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    Bristol Electronics MGFC4419G-A13 12,428
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    MITSUBISHI ELECTRIC MGFC4419GA-03

    HEMT Transistor, N-CHAN, CHIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC4419GA-03 75,400
    • 1 $7.5
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    MITSUBISHI ELECTRIC MGFC4419G-A13

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, GALLIUM ARSENIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC4419G-A13 9,942
    • 1 $12
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    Mitsubishi Electric MGFC4419G

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange MGFC4419G 271
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    MGFC4419G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC4419G Mitsubishi InGaAs HEMT Chip Original PDF
    MGFC4419G-A01 Mitsubishi InGaAs HEMT Chip Original PDF

    MGFC4419G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original
    PDF MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original
    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    fet transistor a03

    Abstract: MGFC4419
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain


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    PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419