C547* transistor
Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
Text: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at
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BFP420
BFP420.
10dBm
C547* transistor
BFP420
R3150
A04 RF amplifier
RF TRANSISTOR
BFP420 application note
SIEMENS BFP420
BCR400W
SOT343 C5
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C547* transistor
Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
Text: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at
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BFP420
BFP420.
C547* transistor
BFP420 application note
transistor C4 016
RF TRANSISTOR
BCR400W
SOT343 C5
C547u
BFP420
C322pF
transistor bfp420
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on semiconductor marking code A04
Abstract: marking A04 C BFY182
Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz
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Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
on semiconductor marking code A04
marking A04 C
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XY 805 ic
Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
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Q97301013
Q97111419
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
XY 805 ic
microwave transducer
marking A04
on semiconductor marking code A04
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marking A04
Abstract: BFY181 p 181 V Q62702F1715
Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
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Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
marking A04
p 181 V
Q62702F1715
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resonator B69500-A9107 siemens
Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active
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BFP405
resonator B69500-A9107 siemens
microwave transistor siemens
B69500-A9107
BFP405
x-band dro
MMIC A04
mtt siemens
SIEMENS BFP405
Siemens Microwave
blocking oscillator uses
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BFP450
Abstract: BCR400 siemens power transistor siemens semiconductor small transistors Siemens rf power transistors BFP450 siemens
Text: Application Note No. 003 Discrete & RF Semiconductors The Vceo-Mystery or How to Use Low-Vceo-Transistors With High Operating Voltages Mobile communications in particular has forced the operating voltages of handheld equipment to a very low level. In order to achieve high gain and high fT, the Vceo of modern
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Untitled
Abstract: No abstract text available
Text: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output J FREQ. MHz MODEL NO. GAIN, dB Typical at MHz 100 1000 2000 note 1 Min. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE POWER, dBm RANGE Typ. MAXIMUM OPERATING RESIS-6 DATA Style
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MAV-11SM
DC-1000
DC-2000
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af190
Abstract: No abstract text available
Text: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)
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MAV-11SM
DC-1000
DC-2000
5996-01-450KITS
af190
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A08 monolithic amplifier
Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Text: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)
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WW107
WW107
RRR137
RRR116
A08 monolithic amplifier
mar 11sm
MAV-4
Code A08 RF Semiconductor
A04 monolithic amplifier
A03 monolithic amplifier
MAV-11SM
MAR-4SM
marking a06
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MMIC Amplifier A04
Abstract: MMIC A04 A04 monolithic amplifier MSA-0486-TR1 MSA-0486-TR2 MSA-04 MSA-0486 MSA-0486-BLK monolithic amplifier MSA A MSA-0486-TR1G
Text: f2 Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-0486 MSA-0486 >6V Fixed Gain, 12 dBm General Purpose Amplifier Description Lifecycle status: Active Features The MSA-04 is a general purpose cascadable 50ohm 12dBm gain block targeted for narrow
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MSA-0486
MSA-04
50ohm
12dBm
MSA-0486
MSA-0486-BLK
MSA-0486-BLKG
MSA-0486-TR1
MMIC Amplifier A04
MMIC A04
A04 monolithic amplifier
MSA-0486-TR1
MSA-0486-TR2
MSA-0486-BLK
monolithic amplifier MSA A
MSA-0486-TR1G
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PG-DSO-20
Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test
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PG-DSO-20
PG-RFP-10
H-34265-8
H-33265-8
H-30248-2
H-36248-2
H-33288-2
H-31248-2
H-37248-2
H-34288-2
PG-DSO-20
a1807
PTFA211801E
H-32259-2
lt 860
PTFA071701GL
ptfa072401fl
1800 ldmos
1805-1880
PTMA210452M
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A09 RF Amplifier
Abstract: Asy transistor DQ06 4 BU9534KV VQFP100 DQ05
Text: 01W136A Signal processor LSI with anti-shock memory controller for CD players BU9534KV Dimension Units : mm BU9534KV is a digital signal processor LSI with built-in pre-servo amplifier, and anti-shock memory controller developed for CD players. This pre-servo amplifier is
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01W136A
BU9534KV
BU9534KV
180sec.
64bit
corre13
A09 RF Amplifier
Asy transistor
DQ06 4
VQFP100
DQ05
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190
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AF190
2002/95/EC)
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MAR-4
Abstract: mmic mar-4 MAR4
Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629
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MSA-0485
VV105
2002/95/EC)
C/85RH
MAR-4
mmic mar-4
MAR4
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Untitled
Abstract: No abstract text available
Text: RT9014/A Preliminary Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor General Description Features RT9014/A is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA, an open drain driver
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RT9014/A
300mA
RT9014/A
300mA,
150mA
240mV
300mA)
DS9014/A-04
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mar8
Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
Text: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE
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MAV-11
mar8
mini-circuits MAR-8
VV105
monolithic amplifier A04
MAV-11
A08 marking
MAR-8
MCL MAR-8
A07 RF Amplifier
marking A06 amplifier
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MSA-0485
Abstract: MSA0485
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0485 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.6 GHz • 8.0 dB Typical Gain at 1.0 GHz • 12.5 dBm Typical P1 dB at 1.0 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package
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MSA-0485
MSA-0485
5965-9577E
MSA0485
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MMIC Amplifier A04
Abstract: A04 monolithic amplifier HP MMIC MSA-0486 MSA-0486-BLK MSA-0486-TR1 monolithic amplifier A04
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0486 Features Description • Cascadable 50 Ω Gain Block The MSA-0486 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount plastic package.
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MSA-0486
MSA-0486
MMIC Amplifier A04
A04 monolithic amplifier
HP MMIC
MSA-0486-BLK
MSA-0486-TR1
monolithic amplifier A04
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MMIC A04
Abstract: MSA-0485 MMIC Amplifier A04 monolithic amplifier MSA A
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0485 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.6 GHz • 8.0 dB Typical Gain at 1.0␣ GHz • 12.5 dBm Typical P1 dB at 1.0␣ GHz • Unconditionally Stable k>1
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MSA-0485
MSA-0485
MMIC A04
MMIC Amplifier A04
monolithic amplifier MSA A
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A21E
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz
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BFY181
Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A21E
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •
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BFY180
Q97301013
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz
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BFY182
Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
FY182
GXM05552
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Untitled
Abstract: No abstract text available
Text: AN 259 AN 259 AM R F RF Converter and IF Amplifier Circuit H ^ /D e sc rip tio n U n i t ' mm AN 259 f±, AM 7 i/ t L X B t f ? il £ ¥ • » { * :* R F l f i Ü , i l â - , %1M, A G C m & , I F H i g 0 f # ü J; L*'Æ*Œ[H]ï#-r'«Æ ? t l X v> â 1-,-
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796kHz
180pF
450kHz
450kHz
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