AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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Untitled
Abstract: No abstract text available
Text: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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socket am3 pinout
Abstract: socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture 80960RM
Text: Intel 80960RM I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Product Features ■ ■ ■ ■ High Performance Intel® 80960JT Core ■ —Sustained One Instruction/Clock Execution
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80960RM
80960JT
32-Bit
socket am3 pinout
socket AM2 pinout
AM3 Processor Functional
INTEL 80960 pipeline architecture
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LGA 1155 Socket PIN diagram
Abstract: LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error
Text: Intel Xeon® Processor E3-1200 Family Datasheet, Volume 1 This is Volume 1 of 2 June 2011 Document Number: 324970-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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E3-1200
aimQ21
LGA 1155 Socket PIN diagram
LGA 1155 PIN diagram
LGA 1155 pin out
lga1155 pin diagram
E3-1275
intel LGA 1155 PIN diagram
1155 PINmap
lga1155 land
E3-1260L
CATERR Catastrophic Error
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MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES ADSP-21060L SHARC ADSP-21062L (SHARC) Texas Instruments TMS320LC31 The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and
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EDI8L32512V
512Kx32
ADSP-21062L
TMS320LC31
EDI8L32512V
ADSP-21060L
MPC860
MO-47AE
ADSP-21060L
ADSP-21062L
EDI8L32128V
MPC860
TMS320LC31
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100MHZ
Abstract: 133MHZ WED3DL644V
Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by
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WED3DL644V
4Mx64
WED3DL644V
4x1Mx64.
4Mx16
133MHZ,
125MHZ
100MHZ.
100MHZ
133MHZ
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cmo 765
Abstract: GR-78 DDR200 DDR266A PC2100 10292003-DNYO-BD9L infineon ddr numbering
Text: Data Sheet, Rev. 1.2, Jan. 2004 HYS72D16500GR-[7/8]-A HYS72D32501GR-[7/8]-A Low Profile DDR SDRAM-Modules DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-06 Published by Infineon Technologies AG,
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HYS72D16500GR-
HYS72D32501GR-
10292003-DNYO-BD9L
cmo 765
GR-78
DDR200
DDR266A
PC2100
10292003-DNYO-BD9L
infineon ddr numbering
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Untitled
Abstract: No abstract text available
Text: WEDPF2M64-XBX3 HI-RELIABILITY PRODUCT 2Mx64 3.3V Simultaneous Operation Multi-Chip Package FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command • Reduces overall programming time when issuing multiple program command sequences ■ Packaging
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WEDPF2M64-XBX3
2Mx64
150ns
16KByte,
32KByte,
64kBytes
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EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
EDI8L32512V-AC
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP-21060L
ADSP-21062L
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8l32128c
Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Text: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs
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EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
M0-47AE
EDI8L32512C
8l32128c
block diagram of of TMS320C4X
EDI8L32512C20AI
TMS320C30
TMS320C32
DSP96002
EDI8L24128C
EDI8L32256C
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21DQ-20
Abstract: 417400
Text: MITSUBISHI LSIs Preliminary Spec MH4M36CXJ/CNXJ-5,-6,-7 FAST PAGE MODE 150994944 -BIT 4194304 -WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH4M36CXJ/CNXJ is 4194304-word x 36-bits dynamicRAM. This consists of eight industry standard 4M x 4
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MH4M36CXJ/CNXJ-5
36-BIT
MH4M36CXJ/CNXJ
4194304-word
36-bits
MH4M36CXJ/CNXJ-5
MH4M36CXJ/CNXJ-6
MH4M36CXJ/CNXJ-7
21DQ-20
417400
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EDI8L32512V-AC
Abstract: 8L32512V
Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution
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EDI8L32512V
512Kx32
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
M0-47AE
EDI8L32512V
EDI8L32512V-AC
8L32512V
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1N6098
Abstract: solitron devices 1N6097 solitron
Text: SOLITRON DEV IC ES INC 8368602 "flb SOLITRON DEVICES INC PE I fl3>fllaD5 DQ053b3 4 8 6 D “Ô 2 3 6 3 ~ ^ D ~ r - Ô 7 - SCHOTTKY RECTIFIERS 1N6097 1N6098 Solitron DEVICES, INC. POWER SCH OTTKY RECTIFIERS 50 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING
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DQ053b3
1N6097
1N6098
1N6097
C8602
300/iS,
1N6098
solitron devices
solitron
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100v mkt
Abstract: P7KE25C P7KE10 P7KE100 P7KE100C P7KE10C P7KE25 P7KE43 P7KE43C X1000
Text: niCRosErii coRP Microsemi Corp. ? r/jeij<cw? .v/i.vn -iV/i, c.4 X sí X hll5ñt.S DQ050T5 7Û7 STE D use P7K E10 thru P7K E100C ni JSf l Ul . A/ I o r m ore inform ation call- 1602} ‘MI-SIOO UNIDIRECTIONAL & BIDIRECTIONAL TRANSIENT ABSORPTION ZENER FEATU R ES
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P7KE10
P7KE100C
P7KE100C
X1000
100v mkt
P7KE25C
P7KE100
P7KE10C
P7KE25
P7KE43
P7KE43C
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Untitled
Abstract: No abstract text available
Text: niCRosErii Microsemi Corp. ? r/jeij<cw? .v/i.vn -iV/i, c.4 X STE D coRP sí hll5ñt.S X DQ050T5 use 7Û7 P7K E10 thru P7K E100C ni JSf l Ul . A/ I o r m ore inform ation call- 1602} ‘MI-SIOO UNIDIRECTIONAL & BIDIRECTIONAL TRANSIENT ABSORPTION ZENER FEATU R ES
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DQ050T5
E100C
P7KE10
P7KE100C
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Untitled
Abstract: No abstract text available
Text: 1.0 I n t r o d u c t io n 1.1.3 Circular Buffers The monolithic SUMMIT provides the system designer with an intelligent solution to MIL-STD-1553 multiplexed serial data bus design problems. The SUMMIT is a single-chip device that implements all three of the defined MIL-STD-1553 functions Remote Terminal, Bus Controller, and Monitor. Operating
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MIL-STD-1553
maint553
139-pin
140-pin
V/-15
/-12V
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Untitled
Abstract: No abstract text available
Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM
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EDI8F32123C
128Kx32
EDI8F32123C
128Kx
128Kx8
EDI8F32123C70MMC
EDI8F32123C85MMC
EDBF32123C
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540L
Abstract: No abstract text available
Text: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative
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80960RM
80960JT
32-Bit
1710H
540L
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 22E D • 7 ‘1c1 7 G7 b OODSbST LC86108A A T -4 Ÿ -/9 -0 8 C M O S LSI 3089 8-Bit Single Chip Microcomputer On-Chip LCD Controller/Driver, 8K-Byte ROM, 168-Byte RAM 3054 The LC86108A m icrocom puter is an 8-bit single chip m icrocom puter with the iq lj^ itn g onchip functional blocks:
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LC86108A
168-Byte
LC86108A
16-bit
LC7930N
LC7930N
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vco with opamp
Abstract: digital clock recovery VCO LB1125AF detector circuit using OP-AMP V15GND
Text: A T & T iiELEC I C 2SE D • 005002b 0002b00 7 ■ PHASE-LOCKED LOOP/TIMING RECOVERY LB1125AF Description T-so-17 The LB1125AF is a general-purpose phase-locked loop (PLL) designed for a variety o f applications, including synchronization, synthesis, signal reconditioning, and stereo decoding. The key elements of the device are a phase
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005002b
0002b00
LB1125AF
T-50-n
LB1125AF
vco with opamp
digital clock recovery VCO
detector circuit using OP-AMP
V15GND
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M2576
Abstract: renco rl2444 2576S-15 transformer LM2576 LM2576-ADJ LM2576-ADJ*. Circuit Diagram using this IC 671 27130 N4001 diode IC 92112 LM2576T
Text: & Semiconductor LM2576/LM2576HV Series SIMPLE SWITCHER 3A Step-Down Voltage Regulator Features • 3.3V, 5V, 12V, 15V, and adjustable output versions ■ Adjustable version output voltage range, 1 .23V to 37V 57V for HV version ± 4 % max over line and load conditions
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LM2576/LM2576HV
LM2576
M2576
renco rl2444
2576S-15
transformer LM2576
LM2576-ADJ
LM2576-ADJ*. Circuit Diagram using this IC
671 27130
N4001 diode
IC 92112
LM2576T
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Untitled
Abstract: No abstract text available
Text: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512KX32
EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
TMS320C30/6C
128Kx32
8L32128C
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6t0045
Abstract: lm2676-adj 1200 uF 63V capacitor 2% LM2676-5 24V alternator regulator 20l diode zener capacitor 470 uf with ESR rating capacitors 100pf LM2676S LM2676S-ADJ
Text: National Semiconductor M ay 1998 LM2676 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator General Description Features The LM 2676 series of regulators are m onolithic integrated circuits which provide all of the active functions fo r a step-dow n buck sw itching regulator capable of driving up to
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LM2676
LM2676
260KHz)
6t0045
lm2676-adj
1200 uF 63V capacitor 2%
LM2676-5
24V alternator regulator
20l diode zener
capacitor 470 uf with ESR rating
capacitors 100pf
LM2676S
LM2676S-ADJ
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