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    A0922 Price and Stock

    Infineon Technologies AG PTFA092201E-V1

    RF MOSFET LDMOS 30V H-36260-2
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    DigiKey PTFA092201E-V1 Tray 35
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    MACOM PTFA092201E-V4-R0

    RF MOSFET LDMOS 30V H-36260-2
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    MACOM PTFA092201E-V4-R250

    RF MOSFET LDMOS 30V H-36260-2
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    DigiKey PTFA092201E-V4-R250 Reel
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    Infineon Technologies AG PTFA092211ELV4XWSA1

    RF MOSFET LDMOS 30V H-33288-2
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    Infineon Technologies AG PTFA092213ELV4R0XTMA1

    RF MOSFET LDMOS
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    Find more A0922 price and stock on Findchips.com

    A0922 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features General Description      ►      The Supertex HV230 is a low charge injection 8-channel, high-voltage, analog switch integrated circuit IC with bleed


    Original     		HV230 50MHz -60dB DSFP-HV230 A071009 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features X X X X X X X X X X General Description HVCMOS technology for high performance Very low quiescent power dissipation -10µA max. Output on-resistance typically (22 typ.)


    Original     		HV230 50MHz -60dB HV230 DSFP-HV230 B080111 PDF

    transistor di 960

    Abstract: No abstract text available
    Text: A092211EL A092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092211EL and A092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960 PDF

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350 PDF

    ultrasound piezoelectric design datasheet

    Abstract: HV230
    Text: HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features            General Description HVCMOS technology for high performance Very low quiescent power dissipation -10µA max. Output on-resistance typically (22Ω typ.)


    Original     		HV230 10MHz -60dB HV230 DSFP-HV230 A102108 ultrasound piezoelectric design datasheet PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH3348 Ordering number : A0922A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3348 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		CPH3348 ENA0922A 1200mm2Ã A0922-7/7 PDF

    CPH3348

    Abstract: A0922 CPH3348-TL-E
    Text: CPH3348 Ordering number : A0922A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3348 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		ENA0922A CPH3348 PW10s, 1200mm2 A0922-7/7 CPH3348 A0922 CPH3348-TL-E PDF

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: A092201E A092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092201E and A092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350 PDF

    CPH3348

    Abstract: No abstract text available
    Text: CPH3348 Ordering number : A0922 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3348 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		CPH3348 ENA0922 1200mm20 A0922-4/4 CPH3348 PDF

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: A092211EL A092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092211EL and A092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt PDF

    ultrasound transducer circuit driver

    Abstract: m1211 ultrasound transducer high power driver ultrasound piezoelectric design datasheet MD1211 datasheet of piezoelectric transducer Piezoelectric ultrasound Transducer ultrasound MD1211LG-G TC6320TG
    Text: MD1211 High Speed, Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► The Supertex MD1211 is a high speed dual MOSFET driver. It is designed to drive high voltage N and P-channel MOSFET transistors for medical ultrasound and other applications


    Original     		MD1211 MD1211 1000pF DSFP-MD1211 A092208 ultrasound transducer circuit driver m1211 ultrasound transducer high power driver ultrasound piezoelectric design datasheet datasheet of piezoelectric transducer Piezoelectric ultrasound Transducer ultrasound MD1211LG-G TC6320TG PDF

    D4 diode top mark

    Abstract: No abstract text available
    Text: Supertex inc. HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features XX XX XX XX XX ►► XX XX XX XX XX General Description HVCMOS technology for high performance Very low quiescent power dissipation -10µA max.


    Original     		50MHz -60dB HV230 HV230 DSFP-HV230 A082609 D4 diode top mark PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : A0922A CPH3348 P-Channel Power MOSFET http://onsemi.com –12V, –3A, 70mΩ, Single CPH3 Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage


    Original     		ENA0922A CPH3348 PW10s, 1200mm2 A0922-7/7 PDF

    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: A092213EL A092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092213EL and A092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350 PDF

    D2-D41

    Abstract: No abstract text available
    Text: Supertex inc. HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features XX XX XX XX XX ►► XX XX XX XX XX General Description HVCMOS technology for high performance Very low quiescent power dissipation -10µA max.


    Original     		50MHz -60dB HV230 HV230 DSFP-HV230 B080111 D2-D41 PDF

    HV230

    Abstract: No abstract text available
    Text: HV230 Low Charge Injection, 8-Channel, High Voltage Analog Switches with Bleed Resistors Features General Description      ►      The Supertex HV230 is a low charge injection 8-channel, high-voltage, analog switch integrated circuit IC with bleed


    Original     		HV230 HV230 DSFP-HV230 A082609 PDF

    PR221DS

    Abstract: 1SCA0226 Thyristor T6N 1SDA051125R1 ABB inverter motor fault code 1SCA10 T-max T3n 250 ABB inverter motor fault abb motor encoder mounting 1sda01
    Text: With effect from 2nd January 2014 Low Voltage Products Price list ABB low voltage products ABB is a global leader in power and automation technologies that enable utility and industry customers to improve performance while lowering environmental impact. ABB


    Original     		CP/2014 CP/2012 PR221DS 1SCA0226 Thyristor T6N 1SDA051125R1 ABB inverter motor fault code 1SCA10 T-max T3n 250 ABB inverter motor fault abb motor encoder mounting 1sda01 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    p 1703 bds

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier


    Original     		PTFA082201E PTFA082201F 220-watt, H-30260-2 H-31260-2 p 1703 bds PDF

    Untitled

    Abstract: No abstract text available
    Text: A092201E A092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092201E and A092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


    Original     		PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: A092201E A092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092201E and A092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 PDF

    100 HFK

    Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
    Text: A092211EL A092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The A092211EL and A092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100 HFK HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PDF