st smd IC marking code
Abstract: 2N5154ESYHRT
Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics
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2N5154HR
O-257
2N5154HR
O-257
DocID15387
st smd IC marking code
2N5154ESYHRT
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smd transistor A1
Abstract: No abstract text available
Text: SMD Type Product specification UMA1N Features Mounting Cost and Area Can Be Cut In Half. Emitter-common Type. PNP Epitaxial Planar Silicon Transistor. Absolute Maximum Ratings Ta = 25 < For Tr1 and Tr2 in common > Parameter Symbol Rating Unit Supply Voltage
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120mW
100MHz
smd transistor A1
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smd transistor A1
Abstract: No abstract text available
Text: SMD Type Product specification FMA1A Features Mounting Cost and Area Can Be Cut In Half. Emitter-common Type. PNP Epitaxial Planar Silicon Transistor. Absolute Maximum Ratings Ta = 25 < For Tr1 and Tr2 in common > Parameter Symbol Rating Unit Supply Voltage
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200mW
100MHz
smd transistor A1
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520301006R
Abstract: 2N5154RESYHRG
Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics
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Original
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2N5154HR
O-257
2N5154HR
O-257
DocID15387
520301006R
2N5154RESYHRG
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PDF
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smd transistor code A4
Abstract: AN1294 PD60004 PD60004S
Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
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PD60004
PD60004S
IS-97
PD60004
PowerSO-10RF.
smd transistor code A4
AN1294
PD60004S
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SMD IC ts 4141
Abstract: BCP51 ts 4141 smd bcp53 SOT-223 bcp55 BCP52 BCP53 BCP54 BCP56
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56
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BCP51
BCP52
BCP53
OT-223
BCP54
BCP55
BCP56
BCP51
BCP52
SMD IC ts 4141
ts 4141 smd
bcp53 SOT-223
BCP53
BCP56
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202319A
Abstract: No abstract text available
Text: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family
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EV183
AAT2822/2823/2824/2825
AAT282x
AAT2822,
AAT2823,
AAT2824,
AAT2825)
AAT282x-1
202319A
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smd transistor marking A4
Abstract: PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking
Text: LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package
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LET9060
PowerSO-10RF
LET9060
PowerSO-10RF.
smd transistor marking A4
PowerSO-10RF marking
st smd diode marking code
J-STD-020B
LET9060S
LET9060STR
LET9060TR
stmicroelectronics PowerSO-10RF marking
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smd transistor A1
Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01
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KO3401
OT-23
smd transistor A1
DIODE smd marking A1
smd transistor 2a 43
KO3401
smd transistor marking A1
SMD TRANSISTOR MARKING 94
SMD TRANSISTOR A1 SOT23
smd diode A1
smd transistor A1 sot-23
marking A1 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead
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PD57060
PD57060S
PowerSO-10RF
PD57060S
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PD85015s-e
Abstract: PD85015 AN1294 PD85015-E
Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
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PD85015-E
PD85015S-E
2002/95/EC
PowerSO-10RF
PD85015-E
PD85015s-e
PD85015
AN1294
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PHB27NQ10T
Abstract: PHP27NQ10T PHD27NQ10T
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHP27NQ10T, PHB27NQ10T PHD27NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V
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PHP27NQ10T,
PHB27NQ10T
PHD27NQ10T
PHP27NQ10T
O220AB)
PHB27NQ10T
OT404
PHD27NQ10T
OT428
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SMD TRANSISTOR fet
Abstract: PHB11N03LT PHD11N03LT
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHB11N03LT, PHD11N03LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible
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PHB11N03LT,
PHD11N03LT
PHB11N03LT
OT404
PHD11N03LT
OT428
SMD TRANSISTOR fet
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NV SMD TRANSISTOR
Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package
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PD85035-E
PD85035S-E
870MHz
2002/93/EC
PowerSO-10RF
PD85035-E
NV SMD TRANSISTOR
PD85035
PD85035S
PD85035S-E
AN1294
JESD97
J-STD-020B
PD85035STR-E
PD85035TR-E
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PD55025
Abstract: PD55025S
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55025
PD55025S
PowerSO-10RF
PD55025
PowerSO-10RF.
PD55ions
PD55025S
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Untitled
Abstract: No abstract text available
Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
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PD84006-E
2002/95/EC
PowerSO-10RF
PD84006-E
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Untitled
Abstract: No abstract text available
Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20030S
IS-97
LET20030S
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AN1294
Abstract: LET20030S
Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20030S
IS-97
LET20030S
AN1294
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PDF
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Untitled
Abstract: No abstract text available
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD57045
PD57045S
PD57045
PowerSO-10RF.
PD57045â
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AN1294
Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description
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PD57030-E
PowerSO-10RF
PowerSO-10RF.
AN1294
J-STD-020B
PD57030-E
PD57030S-E
PD57030STR-E
PD57030TR-E
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PD57045S
Abstract: 700B AN1294 PD57045
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,
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PD57045
PD57045S
PD57045
PowerSO-10RF.
PD57045S
700B
AN1294
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Untitled
Abstract: No abstract text available
Text: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS
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SFH6325,
SFH6326
i179071-3
i179026
SFH6325
SFH6326
11-Mar-11
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PD57060s
Abstract: 700B AN1294 PD57060
Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead • NEW RF PLASTIC PACKAGE
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PD57060
PD57060S
PowerSO-10RF
PD57060S
PowerSO-10RF.
700B
AN1294
PD57060
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PD57060s
Abstract: 700B AN1294 PD57060 925MHz
Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead
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PD57060
PD57060S
PowerSO-10RF
PD57060S
PowerSO-10RF.
PD57060
700B
AN1294
925MHz
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